是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | QFP |
包装说明: | WQFP, TQFP44,.6SQ,32 | 针数: | 44 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.92 |
最长访问时间: | 150 ns | 备用内存宽度: | 16 |
JESD-30 代码: | S-CQFP-G44 | JESD-609代码: | e0 |
长度: | 10 mm | 内存密度: | 4194304 bit |
内存集成电路类型: | MASK ROM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 44 |
字数: | 524288 words | 字数代码: | 512000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 512KX8 | |
输出特性: | 3-STATE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | WQFP | 封装等效代码: | TQFP44,.6SQ,32 |
封装形状: | SQUARE | 封装形式: | FLATPACK, WINDOW |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 5 V | 认证状态: | Not Qualified |
最大待机电流: | 0.00005 A | 子类别: | MASK ROMs |
最大压摆率: | 0.05 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子节距: | 0.8 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 10 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KM23C4100D | SAMSUNG |
获取价格 |
MASK ROM, 512KX8, 80ns, CMOS, PDIP40, 0.600 INCH, DIP-40 | |
KM23C4100D-10 | SAMSUNG |
获取价格 |
MASK ROM, 256KX16, 100ns, CMOS, PDIP40, 0.600 INCH, DIP-40 | |
KM23C4100DET | SAMSUNG |
获取价格 |
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM | |
KM23C4100DET-10 | SAMSUNG |
获取价格 |
MASK ROM, 256KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | |
KM23C4100DET-12 | SAMSUNG |
获取价格 |
MASK ROM, 256KX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | |
KM23C4100DET-8 | SAMSUNG |
获取价格 |
MASK ROM, 256KX16, 80ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | |
KM23C4100DT | SAMSUNG |
获取价格 |
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM | |
KM23C4100DT-8 | SAMSUNG |
获取价格 |
MASK ROM, 256KX16, 80ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | |
KM23C4100FP1-20 | SAMSUNG |
获取价格 |
MASK ROM, 512KX8, 200ns, CMOS, CQFP44, 14 X 14 MM, QFP-44 | |
KM23C4100HFP-10 | SAMSUNG |
获取价格 |
MASK ROM, 512KX8, 100ns, CMOS, PQFP44, 14 X 14 MM, QFP-44 |