是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | DIP, DIP28,.6 |
针数: | 28 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.71 |
风险等级: | 5.92 | 最长访问时间: | 200 ns |
JESD-30 代码: | R-PDIP-T28 | JESD-609代码: | e0 |
长度: | 36.45 mm | 内存密度: | 262144 bit |
内存集成电路类型: | MASK ROM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 28 |
字数: | 32768 words | 字数代码: | 32000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 32KX8 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP28,.6 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 5 V | 认证状态: | Not Qualified |
座面最大高度: | 5.08 mm | 最大待机电流: | 0.0001 A |
子类别: | MASK ROMs | 最大压摆率: | 0.03 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 15.24 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KM23C256G-12 | SAMSUNG |
获取价格 |
MASK ROM, 32KX8, 120ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 | |
KM23C256G-15 | SAMSUNG |
获取价格 |
MASK ROM, 32KX8, 150ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32 | |
KM23C32000-20 | SAMSUNG |
获取价格 |
MASK ROM, 2MX16, 200ns, CMOS, PDIP42, 0.600 INCH, PLASTIC, DIP-42 | |
KM23C32000CET | SAMSUNG |
获取价格 |
MASK ROM, 4MX8, 150ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | |
KM23C32000CET-10 | SAMSUNG |
获取价格 |
MASK ROM, 2MX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | |
KM23C32000CG | SAMSUNG |
获取价格 |
MASK ROM, 4MX8, 150ns, CMOS, PDSO44, 0.600 INCH, SOP-44 | |
KM23C32000CG-12 | SAMSUNG |
获取价格 |
MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44 | |
KM23C32000CT-10 | SAMSUNG |
获取价格 |
MASK ROM, 2MX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | |
KM23C32000FP-25 | SAMSUNG |
获取价格 |
MASK ROM, 4MX8, 250ns, CMOS, PQFP64, QFP-64 | |
KM23C32000G-20 | SAMSUNG |
获取价格 |
MASK ROM, 4MX8, 200ns, CMOS, PDSO44, 0.600 INCH, PLASTIC, SOP-44 |