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KM23C32005BT-12 PDF预览

KM23C32005BT-12

更新时间: 2024-10-31 19:48:59
品牌 Logo 应用领域
三星 - SAMSUNG 有原始数据的样本ROM光电二极管内存集成电路
页数 文件大小 规格书
5页 85K
描述
MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

KM23C32005BT-12 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSOP44,.46,32
针数:44Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.92最长访问时间:120 ns
其他特性:CONFIGURABLE AS 2M X 16备用内存宽度:8
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:18.41 mm内存密度:33554432 bit
内存集成电路类型:MASK ROM内存宽度:16
功能数量:1端子数量:44
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP44,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
电源:5 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.00005 A
子类别:MASK ROMs最大压摆率:0.15 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

KM23C32005BT-12 数据手册

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KM23C32005BT  
CMOS MASK ROM  
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM  
FEATURES  
GENERAL DESCRIPTION  
· Switchable organization  
4,194,304x8(byte mode)  
2,097,152x16(word mode)  
· Fast access time  
The KM23C32005BT is a fully static mask programmable ROM  
fabricated using silicon gate CMOS process technology, and is  
organized either as 4,194,304x8 bit(byte mode) or as  
2,097,152x16 bit(word mode) depending on BHE voltage  
level.(See mode selection table)  
Random Access : 100ns(Max.)  
Page Access  
: 30ns(Max.)  
This device includes page read mode function, page read mode  
allows 8 words(or 16 bytes) of data to read fast in the same  
page, CE and A3 ~ A20 should not be changed.  
· 8 words/ 16 bytes page access  
· Supply voltage : single +5V  
· Current consumption  
This device operates with a 5V single power supply, and all  
inputs and outputs are TTL compatible.  
Operating : 150mA(Max.)  
Standby : 50mA(Max.)  
· Fully static operation  
· All inputs and outputs TTL compatible  
· Three state outputs  
· Package  
-. KM23C32005BT : 44-TSOP2-400  
Because of its asynchronous operation, it requires no external  
clock assuring extremely easy operation.  
It is suitable for use in program memory of microprocessor, and  
data memory, character generator.  
The KM23C32005BT is packaged in a 44-TSOP2.  
FUNCTIONAL BLOCK DIAGRAM  
PIN CONFIGURATION  
A20  
X
MEMORY CELL  
MATRIX  
(2,097,152x16/  
4,194,304x8)  
BUFFERS  
AND  
DECODER  
N.C  
A18  
A20  
1
2
44  
43  
42  
41  
40  
39  
.
.
.
.
.
.
.
.
A19  
A8  
A17  
A7  
3
4
A9  
A6  
A5  
A10  
A11  
5
6
Y
SENSE AMP.  
A4  
7
38 A12  
37 A13  
BUFFERS  
AND  
DECODER  
A3  
8
DATA OUT  
BUFFERS  
A14  
36  
A2  
9
A3  
A1  
A15  
35  
10  
11  
12  
13  
14  
15  
16  
A0~A2  
A-1  
A16  
34  
A0  
TSOP2  
.
.
.
BHE  
CE  
VSS  
OE  
Q0  
Q8  
Q1  
Q9  
33  
32  
31  
30  
VSS  
CE  
Q15/A-1  
Q7  
Q0/Q8  
Q7/Q15  
CONTROL  
LOGIC  
OE  
29 Q14  
28 Q6  
BHE  
17  
18  
Q13  
Q5  
27  
26  
Pin Name  
A0 - A2  
Pin Function  
Page Address Inputs  
Q2 19  
Q10 20  
25 Q12  
Q4  
24  
Q3  
21  
22  
A3 - A20  
Q0 - Q14  
Address Inputs  
Data Outputs  
Q11  
VCC  
23  
Output 15(Word mode)/  
LSB Address(Byte mode)  
Q15 /A-1  
KM23C32005BT  
BHE  
CE  
Word/Byte selection  
Chip Enable  
OE  
Output Enable  
Power ( +5V)  
Ground  
VCC  
VSS  
N.C  
No Connection  

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