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K9S6408V0C-SSB00 PDF预览

K9S6408V0C-SSB00

更新时间: 2024-11-21 19:53:27
品牌 Logo 应用领域
三星 - SAMSUNG 内存集成电路
页数 文件大小 规格书
31页 481K
描述
Flash Card, 8MX8, 35ns, CARD-22

K9S6408V0C-SSB00 技术参数

生命周期:Obsolete零件包装代码:CARD
包装说明:CARD-22针数:22
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.84
最长访问时间:35 ns其他特性:CONTAINS ADDITIONAL 2M BIT NAND FALSH
JESD-30 代码:R-XXMA-X22内存密度:67108864 bit
内存集成电路类型:FLASH CARD内存宽度:8
功能数量:1端子数量:22
字数:8388608 words字数代码:8000000
工作模式:ASYNCHRONOUS最高工作温度:55 °C
最低工作温度:组织:8MX8
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY并行/串行:PARALLEL
编程电压:2.7 V认证状态:Not Qualified
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3.3 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
类型:NAND TYPEBase Number Matches:1

K9S6408V0C-SSB00 数据手册

 浏览型号K9S6408V0C-SSB00的Datasheet PDF文件第2页浏览型号K9S6408V0C-SSB00的Datasheet PDF文件第3页浏览型号K9S6408V0C-SSB00的Datasheet PDF文件第4页浏览型号K9S6408V0C-SSB00的Datasheet PDF文件第5页浏览型号K9S6408V0C-SSB00的Datasheet PDF文件第6页浏览型号K9S6408V0C-SSB00的Datasheet PDF文件第7页 
K9S5608V0C/B K9S6408V0C/B  
K9S2808V0C/B  
TM  
SmartMedia  
Document Title  
SmartMediaTM Card  
Revision History  
Revision No History  
Draft Date  
Remark  
0.0  
0.1  
Initial issue  
July 17th 2000  
Nov. 20th 2000  
Advanced  
Information  
Preliminary  
1. Explain how pointer operation works in detail.  
2. Updated operation for tRST timing  
- If reset command(FFh) is written at Ready state, the device goes  
into Busy for maximum 5us.  
0.2  
1. Renamed the 17th pin from Vcc to LVD(Low Voltage Detect)  
-The LVD is used to electrically detect the proper supply voltage.  
By connecting this pin to Vss through a pull-down resister, it is pos-  
sible to distinguish 3.3V product from 5V product. When 3.3V is  
applied as Vcc to pins 12 and 22, a ’High’ level can be detected  
on the system side if the device is a 3.3V product, and ’Low’ level  
for 5V product.  
Mar. 2th 2001  
Final  
0.3  
1.Powerup sequence is added  
Sep. 7th 2001  
Recovery time of minimum 1ms is required before internal circuit gets  
ready for any command sequences  
~ 2.5V  
~ 2.5V  
V
CC  
High  
WP  
WE  
1ms  
2. AC parameter tCLR(CLE to RE Delay, min 50ns) is added.  
3. AC parameter tAR1 value : 100ns --> 20ns  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.  
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you  
have any questions, please contact the SAMSUNG branch office near your office.  
1

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