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K9T1G08B0M-VIB00 PDF预览

K9T1G08B0M-VIB00

更新时间: 2024-11-25 19:43:35
品牌 Logo 应用领域
三星 - SAMSUNG 光电二极管内存集成电路
页数 文件大小 规格书
38页 897K
描述
Flash, 128MX8, 30ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, PLASTIC, WSOP1-48

K9T1G08B0M-VIB00 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:VSSOP,针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.84
最长访问时间:30 ns其他特性:CONTAINS ADDITIONAL 32M BIT SPARE MEMORY
JESD-30 代码:R-PDSO-G48长度:15.4 mm
内存密度:1073741824 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:48字数:134217728 words
字数代码:128000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128MX8封装主体材料:PLASTIC/EPOXY
封装代码:VSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH并行/串行:PARALLEL
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:0.7 mm最大供电电压 (Vsup):2.9 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):2.7 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
宽度:12 mmBase Number Matches:1

K9T1G08B0M-VIB00 数据手册

 浏览型号K9T1G08B0M-VIB00的Datasheet PDF文件第2页浏览型号K9T1G08B0M-VIB00的Datasheet PDF文件第3页浏览型号K9T1G08B0M-VIB00的Datasheet PDF文件第4页浏览型号K9T1G08B0M-VIB00的Datasheet PDF文件第5页浏览型号K9T1G08B0M-VIB00的Datasheet PDF文件第6页浏览型号K9T1G08B0M-VIB00的Datasheet PDF文件第7页 
Preliminary  
K9T1G08B0M  
FLASH MEMORY  
Document Title  
128M x 8 Bits NAND Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Nov. 8th 2004  
Advanced  
Initial issue.  
1.Program/Erase characteristics note1 is added  
2.Technical note is changed  
0.1  
Nov. 22th 2004  
Preliminary  
3.Vcc range is changed(2.4V~2.9V->2.5V~2.9V)  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.  
http://www.samsung.com/Products/Semiconductor/  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
1

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