是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SOIC | 包装说明: | VSSOP, |
针数: | 48 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.1.A | HTS代码: | 8542.32.00.51 |
风险等级: | 5.84 | 最长访问时间: | 30 ns |
其他特性: | CONTAINS ADDITIONAL 32M BIT SPARE MEMORY | JESD-30 代码: | R-PDSO-G48 |
JESD-609代码: | e6 | 长度: | 15.4 mm |
内存密度: | 1073741824 bit | 内存集成电路类型: | FLASH |
内存宽度: | 8 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端子数量: | 48 |
字数: | 134217728 words | 字数代码: | 128000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 128MX8 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | VSSOP |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 260 |
编程电压: | 2.7 V | 认证状态: | Not Qualified |
座面最大高度: | 0.7 mm | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | TIN BISMUTH |
端子形式: | GULL WING | 端子节距: | 0.5 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
类型: | NAND TYPE | 宽度: | 12 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K9T1G08U0M-PCB00 | SAMSUNG |
获取价格 |
Flash, 128MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48 | |
K9T1G08U0M-PIB0 | SAMSUNG |
获取价格 |
Flash, 128MX8, 45ns, PDSO48 | |
K9T1G08U0M-VCB0 | SAMSUNG |
获取价格 |
Flash, 128MX8, 45ns, PDSO48, | |
K9T1G08U0M-VIB0 | SAMSUNG |
获取价格 |
Flash, 128MX8, 45ns, PDSO48, | |
K9T1G08U0M-VIB00 | SAMSUNG |
获取价格 |
Flash, 128MX8, 30ns, PDSO48, 12 X 17 MM, 0.70 MM PITCH, PLASTIC, WSOP1-48 | |
K9T1G08U0M-YIB0 | SAMSUNG |
获取价格 |
Flash, 128MX8, 45ns, PDSO48, | |
K9W4G08U1M | SAMSUNG |
获取价格 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory | |
K9W4G08U1M-ECB00 | SAMSUNG |
获取价格 |
Flash, 256MX8, PDSO48, 12 X 17 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 | |
K9W4G08U1M-PCB0 | SAMSUNG |
获取价格 |
Flash, 256MX8, PDSO48 | |
K9W4G08U1M-PCB00 | SAMSUNG |
获取价格 |
Flash, 256MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48 |