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K9W4G08U1M-YIB00 PDF预览

K9W4G08U1M-YIB00

更新时间: 2024-11-26 07:17:51
品牌 Logo 应用领域
三星 - SAMSUNG 光电二极管
页数 文件大小 规格书
40页 641K
描述
Flash, 256MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48

K9W4G08U1M-YIB00 数据手册

 浏览型号K9W4G08U1M-YIB00的Datasheet PDF文件第2页浏览型号K9W4G08U1M-YIB00的Datasheet PDF文件第3页浏览型号K9W4G08U1M-YIB00的Datasheet PDF文件第4页浏览型号K9W4G08U1M-YIB00的Datasheet PDF文件第5页浏览型号K9W4G08U1M-YIB00的Datasheet PDF文件第6页浏览型号K9W4G08U1M-YIB00的Datasheet PDF文件第7页 
K9W4G08U1M  
K9K2G08Q0M  
K9K2G08U0M  
K9W4G16U1M  
K9K2G16Q0M  
K9K2G16U0M  
FLASH MEMORY  
Document Title  
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory  
Revision History  
Revision No History  
Draft Date  
Aug. 30.2001  
Nov. 5. 2001  
Remark  
Advance  
0.0  
0.1  
1. Initial issue  
1. IOL(R/B) of 1.8V device is changed.  
-min. Value: 7mA -->3mA  
Preliminary  
-typ. Value: 8mA -->4mA  
Jan. 23. 2002  
May. 29. 2002  
Preliminary  
Preliminary  
0.2  
1. 5th cycle of ID is changed  
: 40h --> 44h  
0.3  
0.4  
0.5  
1. Add WSOP Package Dimensions.  
Aug. 13. 2 002 Preliminary  
1. Add two-K9K2GXXU0M-YCB0/YIB0 Stacked Package  
Aug. 22. 2002  
Nov. 07. 2002  
Preliminary  
Preliminary  
1. Min valid block of K9W4GXXU1M-YCB0/YIB0 is changed .  
- min. 4016 --> 4036  
1. Each K9K2GXXX0M chip in the K9W4GXXU1M has Maximum 30  
0.6  
invalid blocks.  
2. K9W4GXXU1M’s ID is changed  
(Before)  
Device  
K9W4G08U1M  
K9W4G16U1M  
(After)  
2nd Cycle 3rd cycle 4th Cycle 5th Cycle  
DCh  
CCh  
C3  
C3  
15h  
55h  
4Ch  
4Ch  
Device  
2nd Cycle 3rd cycle 4th Cycle 5th Cycle  
K9W4G08U1M  
K9W4G16U1M  
DAh  
CAh  
C1  
C1  
15h  
55h  
44h  
44h  
Nov. 22. 2002  
Mar. 6. 2003  
Preliminary  
Preliminary  
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36)  
2. Add the data protection Vcc guidence for 1.8V device - below about  
1.1V. (Page 37)  
0.7  
0.8  
1. The min. Vcc value 1.8V devices is changed.  
K9K2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you  
have any questions, please contact the SAMSUNG branch office near your office.  
1

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256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9W4G16U1M-ECB00 SAMSUNG

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Flash, 128MX16, PDSO48, 12 X 17 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
K9W4G16U1M-KCB0 SAMSUNG

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K9W4G16U1M-KCB00 SAMSUNG

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Flash, 128MX16, PDSO48, 12 X 17 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
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Flash, 128MX16, PDSO48,
K9W4G16U1M-KIB00 SAMSUNG

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Flash, 128MX16, PDSO48, 12 X 17 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
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Flash, 128MX16, PDSO48,
K9W4G16U1M-PIB00 SAMSUNG

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Flash, 128MX16, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48
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Flash, 128MX16, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
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Flash, 512MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48