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K9T1G08U0M-VIB00 PDF预览

K9T1G08U0M-VIB00

更新时间: 2024-11-21 14:51:51
品牌 Logo 应用领域
三星 - SAMSUNG 光电二极管
页数 文件大小 规格书
38页 885K
描述
Flash, 128MX8, 30ns, PDSO48, 12 X 17 MM, 0.70 MM PITCH, PLASTIC, WSOP1-48

K9T1G08U0M-VIB00 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:VSSOP,针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.84
Base Number Matches:1

K9T1G08U0M-VIB00 数据手册

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FLASH MEMORY  
K9T1G08U0M  
Document Title  
128M x 8 Bits NAND Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
0.1  
0.2  
0.3  
Aug. 7th 2003  
Oct. 20th 2003  
Mar. 9th 2004  
Apr. 24th 2004  
Advanced  
Initial issue.  
tR is changed. [Old : 12µs(Max.), New :15µs(Max.)]  
CE must be held low during tR added.  
Preliminary  
Preliminary  
Preliminary  
Preliminary  
Preliminary  
Final  
1. Add the Protrusion/Burr value in WSOP1 PKG Diagram.  
1. PKG(TSOP1, WSOP1) Dimension Change  
1. Technical note is changed  
0.4  
0.5  
1.0  
May. 24th 2004  
Oct. 25th 2004  
May 6th 2005  
1. The flow chart to creat the initial invalid block table is chacged.  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.  
http://www.samsung.com/Products/Semiconductor/  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
1

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