K9F6408Q0C
K9F6408U0C
FLASH MEMORY
Document Title
8M x 8 Bit NAND Flash Memory
Revision History
Revision No. History
Draft Date
Remark
0.0
0.1
Initial issue.
Jul. 24 . 2001
Advance
1. IOL(R/B) of 1.8V device is changed.
-min. Value: 7mA -->3mA
Nov. 5 . 2001
Preliminary
-typ. Value: 8mA -->4mA
2. Package part number is modified.
K9F6408U0C-Y ---> K9F6408U0C_T
3. AC parameter is changed.
tRP(min.) : 30ns --> 25ns
Nov. 12 . 2001
0.2
1. TBGA package is changed.
- 9mmX11mm 63ball TBGA ---> 6mmX8.5mm 48ball TBGA
2. Part number(TBGA package part number) is changed
- K9F6408Q0C-D ----> K9F6408Q0C-B
- K9F6408U0C-D -----> K9F6408U0C-B
3. K9F6408U0C-BCB0,BIB0 products are added
1. WSOP1 package is added.
0.3
0.4
Mar. 13 . 2002
Nov. 21. 2002
- Part number : K9F6408U0C_VCB0,VIBO
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 28)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 29)
Mar. 05. 2003
Mar. 13 . 2003
The min. Vcc value 1.8V devices is changed.
K9F64XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V
0.5
0.6
Pb-free Package is added.
K9F6408U0C-QCB0,QIB0
K9F6408U0C-HCB0,HIB0
K9F6408Q0C-HCB0,HIB0
K9F6408U0C-FCB0,FIB0
0.7
Note is added.
Jul. 04. 2003
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
Apr. 24. 2004
May. 24. 2004
0.8
0.9
1. Add the Protrusion/Burr value in WSOP1 PKG Diagram.
1. PKG(WSOP1) Dimension Change
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the
SAMSUNG branch office near you.
1