Datasheet > K9F6408U0B

K9F6408U0B

更新时间： 2024-01-15 23:11:18

品牌	Logo	应用领域
三星 - SAMSUNG		闪存
页数	文件大小	规格书
27页	414K
描述
8M x 8 Bit NAND Flash Memory

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数据手册

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K9F6408U0B 数据手册

K9F6408U0B-TCB0, K9F6408U0B-TIB0

FLASH MEMORY

Document Title

8M x 8 Bit NAND Flash Memory

Revision History

Revision No. History

Draft Date

Remark

0.0

0.1

Initial issue.

July 17th 2000

Preliminary

1. Changed endurance : 1 million -> 100K program/erase cycles

1. Changed don’t care mode in address cycles

Nov. 20th 2000

- *X can be "High" or "Low" => *L must be set to "Low"

2. Explain how pointer operation works in detail.

3. Renamed GND input (pin # 6) on behalf of SE (pin # 6)

- The SE input controls the access of the spare area. When SE is high,

the spare area is not accessible for reading or programming. SE is rec

ommended to be coupled to GND or Vcc and should not be toggled

during reading or programming.

=> Connect this input pin to GND or set to static low state unless the

sequential read mode excluding spare area is used.

4. Updated operation for tRST timing

- If reset command(FFh) is written at Ready state, the device goes into

Busy for maximum 5us.

0.2

1.Powerup sequence is added

: Recovery time of minimum 1ms is required before internal circuit gets

ready for any command sequences

Jul. 25th. 2001

~ 2.5V

High

2. AC parameter tCLR(CLE to RE Delay, min 50ns) is added.

3. AC parameter tAR1 value : 100ns --> 20ns

Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the

SAMSUNG branch office near you.

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与K9F6408U0B相关器件

型号	品牌	获取价格	描述	数据表
K9F6408U0B-TCB0	SAMSUNG	获取价格	8M x 8 Bit NAND Flash Memory
K9F6408U0B-TCB00	SAMSUNG	获取价格	Flash, 8MX8, 35ns, PDSO40, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-40/44
K9F6408U0B-TIB0	SAMSUNG	获取价格	8M x 8 Bit NAND Flash Memory
K9F6408U0B-TIB00	SAMSUNG	获取价格	Flash, 8MX8, 35ns, PDSO40, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-40/44
K9F6408U0C	SAMSUNG	获取价格	8M x 8 Bit NAND Flash Memory
K9F6408U0C-B	SAMSUNG	获取价格	8M x 8 Bit Bit NAND Flash Memory
K9F6408U0C-BCB0	SAMSUNG	获取价格	Flash, 8MX8, 35ns, PBGA48, 6 X 8.50 MM, TBGA-48
K9F6408U0C-BCB0T	SAMSUNG	获取价格	Flash, 8MX8, 35ns, PBGA48
K9F6408U0C-F	SAMSUNG	获取价格	8M x 8 Bit Bit NAND Flash Memory
K9F6408U0C-FCB0	SAMSUNG	获取价格	Flash, 8MX8, 35ns, PDSO48