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K6T0808V1D-RB70 PDF预览

K6T0808V1D-RB70

更新时间: 2024-11-09 04:45:19
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管
页数 文件大小 规格书
9页 152K
描述
Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.40 MM, REVERSE, TSOP1-28

K6T0808V1D-RB70 数据手册

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K6T0808V1D, K6T0808U1D Family  
CMOS SRAM  
Document Title  
32Kx8 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No.  
History  
Draft Data  
Remark  
0.0  
Initial draft  
April 1, 1997  
Preliminary  
1.0  
Finalize  
November 12, 1997  
Final  
- Add 70ns part in KM62U256D Family  
- Show ICC read only, and increased value  
ICC = 2mA ® ICC Read = 5mA  
- Seperate ICC1 read and write  
ICC1 = 5mA® ICC1 Read = 5mA, ICC1 Write = 10mA  
- Improved standby current(ISB1)  
Commercial part: 10mA® 5mA  
Extended and Industrial part: 20mA® 5mA  
- Improved VIL(Min.): 0.4V® 0.6V  
- Improved power dissipation: 0.7W® 1W  
1.01  
Errata correction  
October 24, 2001  
Final  
- Removed T’ TL Compatible’from Features  
- Errata correction from 4.5V to 3.0/2.7V for  
DATA RETENTION WAVE FORM  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO, LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 1.01  
October 2001  
1

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