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K6T0908U2B-TB85T PDF预览

K6T0908U2B-TB85T

更新时间: 2024-11-08 19:39:59
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 150K
描述
Standard SRAM, 64KX8, 85ns, CMOS, PDSO32

K6T0908U2B-TB85T 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:TSSOP, TSSOP32,.8,20Reach Compliance Code:compliant
风险等级:5.88最长访问时间:85 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
JESD-609代码:e0内存密度:524288 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
端子数量:32字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP32,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:PARALLEL
电源:3 V认证状态:Not Qualified
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.025 mA标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUALBase Number Matches:1

K6T0908U2B-TB85T 数据手册

 浏览型号K6T0908U2B-TB85T的Datasheet PDF文件第2页浏览型号K6T0908U2B-TB85T的Datasheet PDF文件第3页浏览型号K6T0908U2B-TB85T的Datasheet PDF文件第4页浏览型号K6T0908U2B-TB85T的Datasheet PDF文件第5页浏览型号K6T0908U2B-TB85T的Datasheet PDF文件第6页浏览型号K6T0908U2B-TB85T的Datasheet PDF文件第7页 
K6T0908V2B, K6T0908U2B Family  
CMOS SRAM  
Document Title  
64Kx8 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No. History  
Draft Data  
Remark  
0
Design target  
Finalize  
November 25, 1997  
August 27, 1998  
Advance  
Final  
1.0  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 1.0  
1
August 1998  

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