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K6T1008C2C-GL55T PDF预览

K6T1008C2C-GL55T

更新时间: 2024-09-20 13:09:03
品牌 Logo 应用领域
三星 - SAMSUNG 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
10页 191K
描述
Standard SRAM, 128KX8, 55ns, CMOS, PDSO32

K6T1008C2C-GL55T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SOP, SOP32,.56Reach Compliance Code:unknown
风险等级:5.92最长访问时间:55 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
JESD-609代码:e0内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP32,.56封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
电源:5 V认证状态:Not Qualified
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.06 mA标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUALBase Number Matches:1

K6T1008C2C-GL55T 数据手册

 浏览型号K6T1008C2C-GL55T的Datasheet PDF文件第2页浏览型号K6T1008C2C-GL55T的Datasheet PDF文件第3页浏览型号K6T1008C2C-GL55T的Datasheet PDF文件第4页浏览型号K6T1008C2C-GL55T的Datasheet PDF文件第5页浏览型号K6T1008C2C-GL55T的Datasheet PDF文件第6页浏览型号K6T1008C2C-GL55T的Datasheet PDF文件第7页 
PRELIMINARY  
K6T1008C2C Family  
CMOS SRAM  
Document Title  
128K x8 bit Low Power CMOS Static RAM  
Revision History  
Revision No.  
History  
Draft Date  
Remark  
0.0  
Initial draft  
November 22, 1995  
April 15, 1996  
Design target  
Preliminary  
0.1  
1.0  
2.0  
First revision  
- Seperate read and write at ICC, ICC1  
ICC = ICC1 ® Read : 15mA, Write : 35mA  
Finalized  
September 5, 1996  
November 5, 1997  
Final  
Final  
- Add 70ns speed bin for commercial product and 85ns speed  
bin for industrial.  
Revised  
- Improved operating current  
Add typical value.  
ICC Read : 15mA ® 10mA(Remove write current)  
ICC2 : 90mA ® 60mA  
- Speed bin change  
Remove 45ns from commercial part  
Remove 55ns and 100ns from industrial part.  
The attached data sheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 2.0  
1
November 1997  

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