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K6F1016R4A-FI700 PDF预览

K6F1016R4A-FI700

更新时间: 2024-01-22 14:09:34
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
9页 159K
描述
Standard SRAM, 64KX16, 70ns, CMOS, PBGA48, 6 X 7 MM, FBGA-48

K6F1016R4A-FI700 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA,针数:48
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.82
最长访问时间:70 nsJESD-30 代码:R-PBGA-B48
长度:7 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:48
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64KX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):2.2 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
宽度:6 mmBase Number Matches:1

K6F1016R4A-FI700 数据手册

 浏览型号K6F1016R4A-FI700的Datasheet PDF文件第2页浏览型号K6F1016R4A-FI700的Datasheet PDF文件第3页浏览型号K6F1016R4A-FI700的Datasheet PDF文件第4页浏览型号K6F1016R4A-FI700的Datasheet PDF文件第5页浏览型号K6F1016R4A-FI700的Datasheet PDF文件第6页浏览型号K6F1016R4A-FI700的Datasheet PDF文件第7页 
K6F1016R4A Family  
CMOS SRAM  
Document Title  
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
1.0  
Initial Draft  
October 29, 1998  
Preliminary  
- Specify CSP type to distinguish between uBGA and FBGA  
Finalize  
July 29, 1999  
Final  
- Change operating voltage from 1.7~2.2V to 1.65~2.2V.  
- Change ICC2 from 25mA to 20mA  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 1.0  
July 1999  
- 1 -  

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