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K6F1616R6B-EF55 PDF预览

K6F1616R6B-EF55

更新时间: 2024-12-01 11:00:47
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器
页数 文件大小 规格书
9页 131K
描述
Standard SRAM, 1MX16, 55ns, CMOS, PBGA48, 7 X 7 MM, 0.75 MM PITCH, TBGA-48

K6F1616R6B-EF55 数据手册

 浏览型号K6F1616R6B-EF55的Datasheet PDF文件第2页浏览型号K6F1616R6B-EF55的Datasheet PDF文件第3页浏览型号K6F1616R6B-EF55的Datasheet PDF文件第4页浏览型号K6F1616R6B-EF55的Datasheet PDF文件第5页浏览型号K6F1616R6B-EF55的Datasheet PDF文件第6页浏览型号K6F1616R6B-EF55的Datasheet PDF文件第7页 
K6F1616R6B Family  
CMOS SRAM  
Document Title  
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial draft  
July 29, 2002  
Preliminary  
0.1  
Finalize  
August 21, 2003  
Final  
- Added 55ns speed bin  
- Changed Icc2(@70ns) : 25mA to 22mA  
- Changed Package Coplanarity from 0.08mm to 0.10mm  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 1.0  
August 2003  

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1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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Standard SRAM, 1MX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48
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1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-EF55 SAMSUNG

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1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-EF550 SAMSUNG

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Standard SRAM, 1MX16, 55ns, CMOS, PBGA48, 7 X 7 MM, 0.75 MM PITCH, TBGA-48
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1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM