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K6F1616T6B-EF70 PDF预览

K6F1616T6B-EF70

更新时间: 2024-11-30 22:21:19
品牌 Logo 应用领域
三星 - SAMSUNG 存储内存集成电路静态存储器
页数 文件大小 规格书
10页 201K
描述
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F1616T6B-EF70 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:7 X 7 MM, 0.75 MM PITCH, TBGA-48Reach Compliance Code:compliant
风险等级:5.92最长访问时间:70 ns
其他特性:IT ALSO OPERATES AT 3.3V NOMINAL SUPPPLYI/O 类型:COMMON
JESD-30 代码:S-PBGA-B48JESD-609代码:e0
长度:7 mm内存密度:16777216 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:48
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装等效代码:BGA48,6X8,30
封装形状:SQUARE封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/3.3 V认证状态:Not Qualified
座面最大高度:1 mm最大待机电流:0.00001 A
最小待机电流:1.5 V子类别:SRAMs
最大压摆率:0.025 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7 mmBase Number Matches:1

K6F1616T6B-EF70 数据手册

 浏览型号K6F1616T6B-EF70的Datasheet PDF文件第2页浏览型号K6F1616T6B-EF70的Datasheet PDF文件第3页浏览型号K6F1616T6B-EF70的Datasheet PDF文件第4页浏览型号K6F1616T6B-EF70的Datasheet PDF文件第5页浏览型号K6F1616T6B-EF70的Datasheet PDF文件第6页浏览型号K6F1616T6B-EF70的Datasheet PDF文件第7页 
K6F1616T6B Family  
CMOS SRAM  
Document Title  
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial draft  
May 21, 2003  
Preliminary  
0.1  
Revised  
June 17, 2003  
Preliminary  
Final  
- Changed Isb1(max.) from 25uA to 15uA  
1.0  
Finalized  
August 13, 2003  
- Added Package Type ’48-TBGA - 7.00x7.00’  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 1.0  
August 2003  

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