是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | VFBGA, BGA48,6X8,30 |
针数: | 48 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.89 | 最长访问时间: | 85 ns |
I/O 类型: | COMMON | JESD-30 代码: | R-PBGA-B48 |
JESD-609代码: | e0 | 长度: | 9.5 mm |
内存密度: | 16777216 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 48 | 字数: | 1048576 words |
字数代码: | 1000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 1MX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | VFBGA |
封装等效代码: | BGA48,6X8,30 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 1.8/2 V |
认证状态: | Not Qualified | 座面最大高度: | 1 mm |
最大待机电流: | 0.000008 A | 最小待机电流: | 1 V |
子类别: | SRAMs | 最大压摆率: | 0.02 mA |
最大供电电压 (Vsup): | 2.2 V | 最小供电电压 (Vsup): | 1.65 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | BALL |
端子节距: | 0.75 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 7.5 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K6F1616R6B-EF55 | SAMSUNG |
获取价格 |
Standard SRAM, 1MX16, 55ns, CMOS, PBGA48, 7 X 7 MM, 0.75 MM PITCH, TBGA-48 | |
K6F1616R6B-EF70T | SAMSUNG |
获取价格 |
Standard SRAM, 1MX16, 70ns, CMOS, PBGA48 | |
K6F1616R6B-EF85 | SAMSUNG |
获取价格 |
Standard SRAM, 1MX16, 85ns, CMOS, PBGA48, 7 X 7 MM, 0.75 MM PITCH, TBGA-48 | |
K6F1616R6C | SAMSUNG |
获取价格 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F1616R6C-F | SAMSUNG |
获取价格 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F1616R6C-FF70 | SAMSUNG |
获取价格 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F1616R6C-FF700 | SAMSUNG |
获取价格 |
Standard SRAM, 1MX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48 | |
K6F1616T6B | SAMSUNG |
获取价格 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F1616T6B-EF55 | SAMSUNG |
获取价格 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F1616T6B-EF550 | SAMSUNG |
获取价格 |
Standard SRAM, 1MX16, 55ns, CMOS, PBGA48, 7 X 7 MM, 0.75 MM PITCH, TBGA-48 |