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K6F1016R4C-EF700 PDF预览

K6F1016R4C-EF700

更新时间: 2024-11-30 14:51:47
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
9页 158K
描述
Standard SRAM, 64KX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48

K6F1016R4C-EF700 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:VFBGA,针数:48
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.82
Is Samacsys:N最长访问时间:70 ns
JESD-30 代码:R-PBGA-B48长度:7 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:48字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:64KX16封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:1 mm
最大供电电压 (Vsup):2.2 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM宽度:6 mm
Base Number Matches:1

K6F1016R4C-EF700 数据手册

 浏览型号K6F1016R4C-EF700的Datasheet PDF文件第2页浏览型号K6F1016R4C-EF700的Datasheet PDF文件第3页浏览型号K6F1016R4C-EF700的Datasheet PDF文件第4页浏览型号K6F1016R4C-EF700的Datasheet PDF文件第5页浏览型号K6F1016R4C-EF700的Datasheet PDF文件第6页浏览型号K6F1016R4C-EF700的Datasheet PDF文件第7页 
Preliminary  
CMOS SRAM  
K6F1016R4C Family  
Document Title  
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM  
Revision History  
Revision No. History  
0.0 Initial Draft  
Draft Date  
Remark  
Preliminary  
May 17, 2001  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 0.0  
May 2001  
- 1 -  

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