生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | VFBGA, | 针数: | 48 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.82 |
Is Samacsys: | N | 最长访问时间: | 70 ns |
JESD-30 代码: | R-PBGA-B48 | 长度: | 7 mm |
内存密度: | 1048576 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 48 | 字数: | 65536 words |
字数代码: | 64000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 64KX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | VFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 并行/串行: | PARALLEL |
认证状态: | Not Qualified | 座面最大高度: | 1 mm |
最大供电电压 (Vsup): | 2.2 V | 最小供电电压 (Vsup): | 1.65 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | BALL | 端子节距: | 0.75 mm |
端子位置: | BOTTOM | 宽度: | 6 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K6F1016S3M-TB15 | SAMSUNG |
获取价格 |
Standard SRAM, 64KX16, 150ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | |
K6F1016S4A-FI100 | SAMSUNG |
获取价格 |
Standard SRAM, 64KX16, 100ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48 | |
K6F1016S4A-FI700 | SAMSUNG |
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Standard SRAM, 64KX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48 | |
K6F1016U4B | SAMSUNG |
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64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F1016U4B-F | SAMSUNG |
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64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F1016U4B-FF55 | SAMSUNG |
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64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F1016U4B-FF55T | SAMSUNG |
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Standard SRAM, 64KX16, 55ns, CMOS, PBGA48 | |
K6F1016U4B-FF70 | SAMSUNG |
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64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F1016U4B-FF70T | SAMSUNG |
获取价格 |
Standard SRAM, 64KX16, 70ns, CMOS, PBGA48 | |
K6F1016U4C-AF55 | SAMSUNG |
获取价格 |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |