生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | TFBGA, | 针数: | 84 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.32 | 风险等级: | 5.84 |
访问模式: | MULTI BANK PAGE BURST | 最长访问时间: | 0.4 ns |
其他特性: | AUTO/SELF REFRESH | JESD-30 代码: | R-PBGA-B84 |
长度: | 12.5 mm | 内存密度: | 1073741824 bit |
内存集成电路类型: | SYNCHRONOUS GRAPHICS RAM | 内存宽度: | 16 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 84 | 字数: | 67108864 words |
字数代码: | 64000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | |
组织: | 64MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 自我刷新: | YES |
最大供电电压 (Vsup): | 1.9 V | 最小供电电压 (Vsup): | 1.7 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 宽度: | 7.5 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4N1G164QQ-HC200 | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, 0.35ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 |
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K4N1G164QQ-HC20T | SAMSUNG |
获取价格 |
Cache DRAM Module, 64MX16, 0.35ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 |
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K4N1G164QQ-HC250 | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 |
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K4N1G164QQ-HC25T | SAMSUNG |
获取价格 |
Cache DRAM Module, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 |
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K4N25 | KODENSHI |
获取价格 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
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K4N25A | KODENSHI |
获取价格 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
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K4N25G | KODENSHI |
获取价格 |
Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) |
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K4N25H | KODENSHI |
获取价格 |
Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) |
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K4N26 | KODENSHI |
获取价格 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
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K4N26323AE | SAMSUNG |
获取价格 |
128Mbit GDDR2 SDRAM |
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