5秒后页面跳转
K4N38 PDF预览

K4N38

更新时间: 2024-02-28 11:31:44
品牌 Logo 应用领域
可天士 - KODENSHI 光电
页数 文件大小 规格书
3页 193K
描述
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

K4N38 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.51Is Samacsys:N
当前传输比率-最小值:10%最大正向电流:0.06 A
最大正向电压:1.3 V最大绝缘电压:2500 V
安装特点:THROUGH HOLE MOUNT元件数量:1
最大通态电流:0.1 A最高工作温度:100 °C
最低工作温度:-30 °C最大功率耗散:0.15 W
最长响应时间:0.00001 s子类别:Optocoupler - Transistor Outputs
表面贴装:NOBase Number Matches:1

K4N38 数据手册

 浏览型号K4N38的Datasheet PDF文件第2页浏览型号K4N38的Datasheet PDF文件第3页 
Photocoupler  
K4N38 K4N38A  
DIMENSION  
(Unit : mm)  
These Photocouplers consist of a Gallium Arsenide Infrared Emitting  
Diode and a Silicon NPN Phototransistor in a 6-pin package.  
7.62 0.25  
6.4  
6
5
4
FEATURES  
• Switching Time - Typ. 3  
0.25  
• Collector-Emitter Voltage : Min.80V  
• Current Transfer Ratio : Typ.100% (at IF=10mA, VCE=10V)  
• Electrical Isolation Voltage : AC2500Vrms  
• UL Recognized File No. E107486  
1
2
8.9 0.25  
Orientation Mark  
3
PIN NO. AND INTERNAL  
CONNECTION DIAGRAM  
6
5
4
APPLICATIONS  
0.5  
• Interface between two circuits of different potential  
1.2  
2.54 0.25  
3
2
1
• Vending Machine, Voltage Regulator  
• Traffic Controller System  
• Programmable Controller  
MAXIMUM RATINGS  
(Ta=25)  
Unit  
Parameter  
Symbol  
Rating  
Forward Current  
IF  
mA  
60  
Reverse Voltage  
Peak Forward Current *1  
VR  
IFP  
V
A
5
3
Input  
Power Dissipation  
PD  
70  
mW  
V
Collector-Emitter Breakdown Voltage  
Emitter-Collector Breakdown Voltage  
Collector-Base Breakdown Voltage  
Collector Current  
BVCEO  
BVECO  
BVCBO  
IC  
80  
6
V
Output  
80  
V
100  
mA  
mW  
Vrms  
Collector Power Dissipation  
PC  
150  
Viso  
Input to Output Isolation Voltage*2  
Storage Temperature  
AC2500  
-55~+125  
-30~+100  
260  
Tstg  
Operating Temperature  
Lead Soldering Temperature*3  
Topr  
Tsol  
Total Power Dissipation  
Ptot  
200  
mW  
*1. Input current with 100  
pulse width, 1% duty cycle  
*2. Measured at RH=40~60% for 1min  
*3. 1/16 inch form case for 10sec  
1/3  

与K4N38相关器件

型号 品牌 获取价格 描述 数据表
K4N38A KODENSHI

获取价格

Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
K4N51163QC-GC25T SAMSUNG

获取价格

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84
K4N51163QC-GC2AT SAMSUNG

获取价格

DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84
K4N51163QC-GC33 SAMSUNG

获取价格

DDR DRAM, 32MX16, 0.47ns, CMOS, PBGA84
K4N51163QC-GC36 SAMSUNG

获取价格

DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84
K4N51163QC-GC36T SAMSUNG

获取价格

DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84
K4N51163QC-ZC SAMSUNG

获取价格

512Mbit gDDR2 SDRAM
K4N51163QC-ZC25 SAMSUNG

获取价格

512Mbit gDDR2 SDRAM
K4N51163QC-ZC250 SAMSUNG

获取价格

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84
K4N51163QC-ZC2A SAMSUNG

获取价格

512Mbit gDDR2 SDRAM