生命周期: | Contact Manufacturer | Reach Compliance Code: | compliant |
风险等级: | 5.59 | Is Samacsys: | N |
当前传输比率-最小值: | 50% | 最大正向电流: | 0.05 A |
最大正向电压: | 1.3 V | 最大绝缘电压: | 5000 V |
安装特点: | THROUGH HOLE MOUNT | 元件数量: | 1 |
最大通态电流: | 0.05 A | 最高工作温度: | 85 °C |
最低工作温度: | -30 °C | 最大功率耗散: | 0.15 W |
最长响应时间: | 0.000006 s | 子类别: | Optocoupler - Transistor Outputs |
表面贴装: | NO | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4N25G | KODENSHI |
获取价格 |
Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) |
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K4N25H | KODENSHI |
获取价格 |
Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) |
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K4N26 | KODENSHI |
获取价格 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
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K4N26323AE | SAMSUNG |
获取价格 |
128Mbit GDDR2 SDRAM |
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K4N26323AE-GC20 | SAMSUNG |
获取价格 |
128Mbit GDDR2 SDRAM |
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K4N26323AE-GC200 | SAMSUNG |
获取价格 |
DDR DRAM, 4MX32, CMOS, PBGA144, FBGA-144 |
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K4N26323AE-GC22 | SAMSUNG |
获取价格 |
128Mbit GDDR2 SDRAM |
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K4N26323AE-GC25 | SAMSUNG |
获取价格 |
128Mbit GDDR2 SDRAM |
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K4N26323AE-GC250 | SAMSUNG |
获取价格 |
DDR DRAM, 4MX32, CMOS, PBGA144, FBGA-144 |
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K4N27 | KODENSHI |
获取价格 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
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