生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.8 | 当前传输比率-最小值: | 100% |
最大正向电流: | 0.06 A | 最大正向电压: | 1.3 V |
最大绝缘电压: | 2500 V | 安装特点: | THROUGH HOLE MOUNT |
元件数量: | 1 | 最大通态电流: | 0.05 A |
最高工作温度: | 85 °C | 最低工作温度: | -30 °C |
最大功率耗散: | 0.15 W | 最长响应时间: | 0.000009 s |
子类别: | Optocoupler - Transistor Outputs | 表面贴装: | NO |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4N31 | KODENSHI |
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Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) |
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K4N32 | KODENSHI |
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Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) |
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K4N33 | KODENSHI |
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Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) |
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K4N35 | KODENSHI |
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Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
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K4N36 | KODENSHI |
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Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
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K4N37 | KODENSHI |
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Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
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K4N38 | KODENSHI |
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Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
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K4N38A | KODENSHI |
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Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
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K4N51163QC-GC25T | SAMSUNG |
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DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84 |
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K4N51163QC-GC2AT | SAMSUNG |
获取价格 |
DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84 |
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