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JANTXVH2N7269U

更新时间： 2024-02-20 05:57:53
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
27页 1035K
描述
Power Field-Effect Transistor, 26A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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JANTXVH2N7269U 技术参数

是否Rohs认证： 不符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.19其他特性：RADIATION HARDENED
雪崩能效等级（Eas）：500 mJ外壳连接：DRAIN
配置：SINGLE最小漏源击穿电压：200 V
最大漏极电流 (Abs) (ID)：26 A最大漏极电流 (ID)：26 A
最大漏源导通电阻：0.1 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：150 W
最大脉冲漏极电流 (IDM)：104 A认证状态：Qualified
参考标准：MIL-19500/603E子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：SILICON
Base Number Matches：1

JANTXVH2N7269U 数据手册

 浏览型号JANTXVH2N7269U的Datasheet PDF文件第1页浏览型号JANTXVH2N7269U的Datasheet PDF文件第3页浏览型号JANTXVH2N7269U的Datasheet PDF文件第4页浏览型号JANTXVH2N7269U的Datasheet PDF文件第5页浏览型号JANTXVH2N7269U的Datasheet PDF文件第6页浏览型号JANTXVH2N7269U的Datasheet PDF文件第7页 
MIL-PRF-19500/603J  
1.3 Maximum ratings. Unless otherwise specified, T = +25°C - Continued.  
C
(1) Derate linearly 1.2 W/°C for T > +25°C.  
C
(2) See figure 3 for thermal impedance curves.  
(3) The following formula derives the maximum theoretical ID limit. ID is limited by package design:  
-
TJM TC  
( on ) at  
=
ID  
(
)
x
(
)
RθJC  
RDS  
TJM  
(4) See figure 4 for maximum drain current graphs.  
1.4 Primary electrical characteristics at TC = +25°C.  
Type  
Min  
V
Max I  
V
Max r  
(1)  
E
I
AS  
GS(TH)1  
DSS1  
= 0  
DS(ON)  
AS  
at I  
D1  
V
(BR)DSS  
V
= 12 V dc  
V
≥ V  
GS  
DS  
GS  
DS  
GS  
V
= 0  
GS  
= 1.0  
V
= 80  
I
= 1.0  
D
I
mA dc  
percent of rated  
T
J
= +25°C  
at I  
D2  
ohm  
T = +150°C  
J
D
V
mA dc  
DS  
at I  
D2  
ohm  
V dc  
Min  
Max  
mJ  
A
µA dc  
V dc  
2.0  
2.0  
2.0  
2.0  
V dc  
4.0  
4.0  
4.0  
4.0  
2N7394, 2N7394U  
2N7268, 2N7268U  
2N7269, 2N7269U  
2N7270, 2N7270U  
60  
100  
200  
500  
25  
25  
25  
50  
0.027  
0.065  
0.100  
0.450  
0.030  
0.132  
0.230  
1.260  
500  
500  
500  
500  
35.0  
34.0  
26.0  
11.0  
(1) Pulsed (see 4.5.1).  
2. APPLICABLE DOCUMENTS  
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This  
section does not include documents cited in other sections of this specification or recommended for additional  
information or as examples. While every effort has been made to ensure the completeness of this list, document  
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this  
specification, whether or not they are listed.  
2.2 Government documents.  
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a  
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are  
those cited in the solicitation or contract.  
DEPARTMENT OF DEFENSE SPECIFICATIONS  
MIL-PRF-19500  
DEPARTMENT OF DEFENSE STANDARDS  
MIL-STD-750 Test Methods for Semiconductor Devices.  
-
Semiconductor Devices, General Specification for.  
-
*
(Copies of these documents are available online at http://quicksearch.dla.mil or https://assist.dla.mil or from the  
Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)  
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the  
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this  
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.  
2
 
 
 
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