Datasheet > JANTXVG2N7431U

JANTXVG2N7431U

更新时间： 2023-12-06 20:13:00

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	1297K
描述
Rad hard, 60V, 56A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 500 krad(Si) TID, QPL

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JANTXVG2N7431U 数据手册

IRHNA7064 (JANSR2N7431U)

Radiation Hardened Power MOSFET (SMD-2)

Device Characteristics

2.1

Electrical Characteristics (Pre-Irradiation)

Table 3

Symbol

Static and Dynamic Electrical Characteristics @ T_j= 25°C (Unless Otherwise Specified)

Parameter

Min. Typ. Max. Unit Test Conditions

Drain-to-Source Breakdown

Voltage

BV_DSS

—

V_GS= 0V, I_D= 1.0mA

Breakdown Voltage Temp.

Coefficient

BV_DSS/T_J

R_DS(on)

0.056

V/°C Reference to 25°C, I_D= 1.0mA

—

2.0

—

0.015

0.018

4.0

V_GS= 12V, I_D2= 56A ¹



Static Drain-to-Source On-State

Resistance

V_GS= 12V, I_D1= 75A¹

V_GS(th)

Gfs

Gate Threshold Voltage

V_DS= V_GS, I_D= 1mA

V_DS= 15V, I_D2= 35A ¹

V_DS= 48V, V_GS= 0V

V_DS= 48V,V_GS= 0V,T_J= 125°C

V_GS= 20V

Forward Transconductance

—

I_DSS

I_GSS

Zero Gate Voltage Drain Current

A

250

100

-100

270

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

V_GS= -20V

Q_G

I_D1= 75A

Q_GS

Q_GD

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

nC V_DS= 30V

V_GS= 12V

110

I_D1= 75A **

V_DD= 30V

R_G= 2.35

V_GS= 12V

120

100

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

Measured from Drain lead (6mm /

0.25 in from package) to Source lead

(6mm/ 0.25 in from package) with

Source wire internally bonded from

Source pin to Drain pad

L_s+L_D

Total Inductance

—

6.8

—

C_iss

C_oss

C_rss

Input Capacitance

—

4900

2800

860

—

V_GS= 0V

pF V_DS= 25V

Output Capacitance

ƒ = 1.0MHz

Reverse Transfer Capacitance

** Switching speed maximum limits are based on manufacturing test equipment and capability.

¹Pulse width  300 µs; Duty Cycle  2%

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2021-06-24

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