Datasheet > JANTXVG2N7431U

JANTXVG2N7431U

更新时间： 2023-12-06 20:13:00

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	1297K
描述
Rad hard, 60V, 56A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 500 krad(Si) TID, QPL

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JANTXVG2N7431U 数据手册

IRHNA7064 (JANSR2N7431U)

Radiation Hardened Power MOSFET (SMD-2)

Device Characteristics

2.2

Source-Drain Diode Ratings and Characteristics (Pre-Irradiation)

Table 4

Source-Drain Diode Characteristics

Symbol Parameter

Min. Typ. Max. Unit Test Conditions

I_S

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode) ¹

—

300

1.5

360

3.1

I_SM

V_SD

t_rr

Diode Forward Voltage

T_J= 25°C, I_S= 75A, V_GS= 0V

Reverse Recovery Time

µC

T_J= 25°C, I_F= 75A, V_DD≤ 50V

di/dt = 100A/µs

Q_rr

t_on

Reverse Recovery Charge

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

2.3

Thermal Characteristics

Table 5

Symbol

R_JC

Thermal Resistance

Parameter

Min. Typ.

Max.

0.42

—

Unit

Junction-to-Case

—

^°C/W

Junction-to-PC board (Soldered to a 1” sq. copper-clad board)

1.6

R_J-PCB

2.4

Radiation Characteristics

IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness

assurance program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for

total ionizing dose (per notes 3 and 4) using the TO-3 package. Both pre- and post-irradiation performance are

tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.

2.4.1

Electrical Characteristics — Post Total Dose Irradiation

Table 6

Electrical Characteristics @ T_J= 25°C, Post Total Dose Irradiation ^{3, 4}

100krad (Si)⁵300k- 500k rad (Si)⁶

Symbol

Parameter

Unit

Test Conditions

Min. Max.

Min.

Max.

BV_DSS

Drain-to-Source Breakdown

Voltage

—

V_GS= 0V, I_D= 1.0mA

V_GS(th)

I_GSS

Gate Threshold Voltage

2.0

—

4.0

100

-100

1.25

—

4.5

100

-100

V_DS= V_GS, I_D= 1.0mA

V_GS= 20V

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

—

V_GS= -20V

I_DSS

—

µA V_DS= 48V, V_GS= 0V

R_DS(on)Static Drain-to-Source

On-State Resistance (TO-3) ²

—

0.015

—

0.025

V_GS= 12V, I_D2= 56A



R_DS(on)Static Drain-to-Source

—

0.015

1.5

—

0.025

1.5

V_GS= 12V, I_D2= 56A

V_GS= 0V, I_F= 75A



On-State Resistance (SMD-2) ²

V_SD

Diode Forward Voltage

¹Repetitive Rating; Pulse width limited by maximum junction temperature.

²Pulse width  300 µs; Duty Cycle  2%

³Total Dose Irradiation with V_GSBias. V_GS= 12V applied and V_DS= 0 during irradiation per MIL-STD-750, Method 1019, condition A.

⁴Total Dose Irradiation with V_DSBias. V_DS= 48V applied and V_GS= 0 during irradiation per MlL-STD-750, Method 1019, condition A.

⁵Part number(s) : IRHNA7064 (JANSR2N7431U)

⁶Part numbers(s) : IRHNA3064 (JANSF2N7431U) and IRHNA5064 (JANSG2N7431U)

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2021-06-24

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