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JANTXVH2N7262 PDF预览

JANTXVH2N7262

更新时间： 2024-01-23 10:56:30
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
24页 93K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5.5A I(D) | TO-205AF

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JANTXVH2N7262 技术参数

生命周期：Active零件包装代码：LCC
包装说明：CHIP CARRIER, R-CQCC-N15针数：15
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.36
配置：SINGLE最小漏源击穿电压：200 V
最大漏极电流 (ID)：5.5 AFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-CQCC-N15元件数量：1
端子数量：15工作模式：ENHANCEMENT MODE
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：CHIP CARRIER极性/信道类型：N-CHANNEL
认证状态：Qualified参考标准：MIL-19500/601E
表面贴装：YES端子形式：NO LEAD
端子位置：QUAD晶体管元件材料：SILICON
Base Number Matches：1

JANTXVH2N7262 数据手册

 浏览型号JANTXVH2N7262的Datasheet PDF文件第2页浏览型号JANTXVH2N7262的Datasheet PDF文件第3页浏览型号JANTXVH2N7262的Datasheet PDF文件第4页浏览型号JANTXVH2N7262的Datasheet PDF文件第5页浏览型号JANTXVH2N7262的Datasheet PDF文件第6页浏览型号JANTXVH2N7262的Datasheet PDF文件第7页 
INCH-POUND  
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 17 October 2001.  
MIL-PRF-19500/601D  
17 July 2001  
SUPERSEDING  
MIL-PRF-19500/601C  
12 October 1997  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY)  
TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7261 AND 2N7262 AND U SUFFIXES  
JANTXVR, F, G, AND H AND JANSR, F, G, AND H  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode,  
MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided for  
each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (E ) and maximum  
AS  
avalanche current (I ).  
AS  
1.2 Physical dimensions. See figure 1, (TO-205AF) and figure 2 (LCC).  
1.3 Maximum ratings. Unless otherwise specified, T = +25°C.  
A
Type  
(1)  
P
(2)  
P
V
V
V
I
I
I
I
T
V
ISO  
70,000  
foot  
T
T
DS  
DG  
GS  
D1(3)  
D2  
S
DM  
(4)  
op  
and  
T
=
T
A
=
T
C
=
T
=
(3)  
T
STG  
C
C
altitude  
+25°C  
+25°C  
+25°C  
+100°C  
(free air)  
W
W
V dc  
V dc  
V dc  
A dc  
A dc  
A dc A(pk)  
V dc  
°C  
2N7261  
2N7262  
25  
25  
0.8  
0.8  
100  
200  
100  
200  
8 .0  
5.5  
5 .0  
3.5  
8 .0  
5.5  
32  
22  
N/A  
N/A  
±20  
±20  
-55 to  
+150  
(1) Unless otherwise specified, electrical characteristics, ratings and conditions for “U” suffix devices (surface mount  
LCC) are identical to the corresponding non “U” suffix devices.  
(2) Derate linearly 0.2 W/°C for T > +25°C;  
C
(3)  
max -  
1
T J  
)x(  
T C  
at max )  
=
I D  
(
R
θ
rDSon T J  
JC  
(4) IDM = 4 X ID1 as calculated in footnote (2).  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in  
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.  
Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD  
Form 1426) appearing at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
1234567...24

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