是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BFM | 包装说明: | FLANGE MOUNT, O-MBFM-P2 |
针数: | 2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.16 | Is Samacsys: | N |
其他特性: | RADIATION HARDENED | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 38 A | 最大漏源导通电阻: | 0.055 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-204AE |
JESD-30 代码: | O-MBFM-P2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 70 A |
认证状态: | Qualified | 参考标准: | MILITARY STANDARD (USA) |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2N6764E3 | MICROSEMI |
功能相似 |
Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Me | |
IRF150 | IXYS |
功能相似 |
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TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.400ohm, Id=12A) | |
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JANTXV2N6782 | INFINEON |
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HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) |