5秒后页面跳转
JANTXV2N6286 PDF预览

JANTXV2N6286

更新时间: 2024-01-09 21:01:18
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
14页 78K
描述
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 20A I(C) | TO-3

JANTXV2N6286 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-3
包装说明:TO-3, 2 PIN针数:2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.18外壳连接:COLLECTOR
最大集电极电流 (IC):20 A集电极-发射极最大电压:80 V
配置:DARLINGTON最小直流电流增益 (hFE):300
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Qualified
参考标准:MIL-19500/505B表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

JANTXV2N6286 数据手册

 浏览型号JANTXV2N6286的Datasheet PDF文件第1页浏览型号JANTXV2N6286的Datasheet PDF文件第2页浏览型号JANTXV2N6286的Datasheet PDF文件第4页浏览型号JANTXV2N6286的Datasheet PDF文件第5页浏览型号JANTXV2N6286的Datasheet PDF文件第6页浏览型号JANTXV2N6286的Datasheet PDF文件第7页 
MIL-PRF-19500/505B  
NOTES:  
1. Dimensions are in inches.  
2. Metric equivalents are given for general information only.  
3. Body contour is optional within zone defined by CD  
4. These dimensions shall be measured at points .050 (1.27 mm) to 0.055 (1.40 mm) below seating plane.  
5. Both terminals.  
6. At both ends.  
7. Two holes.  
8. Terminal 1 is the emitter, terminal 2 is base. The collector shall be electrically connected to the case.  
9. LD applies between L1 and LL. Diameter is uncontrolled in L1.  
10. In accordance with ANSI Y14.5M, diameters are equivalent to f x symbology.  
FIGURE 1. Physical dimensions. (Similar to TO-3)  
3

与JANTXV2N6286相关器件

型号 品牌 获取价格 描述 数据表
JANTXV2N6287 ETC

获取价格

TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 20A I(C) | TO-3
JANTXV2N6298 MICROSEMI

获取价格

PNP DARLINGTON POWER SILICON TRANSISTOR
JANTXV2N6299 MICROSEMI

获取价格

PNP DARLINGTON POWER SILICON TRANSISTOR
JANTXV2N6300 MICROSEMI

获取价格

PNP DARLINGTON POWER SILICON TRANSISTOR
JANTXV2N6301 MICROSEMI

获取价格

PNP DARLINGTON POWER SILICON TRANSISTOR
JANTXV2N6306 ETC

获取价格

TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 8A I(C) | TO-3
JANTXV2N6308 MICROSEMI

获取价格

NPN POWER SILICON TRANSISTOR
JANTXV2N6338 ETC

获取价格

TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 25A I(C) | TO-3
JANTXV2N6340 MICROSEMI

获取价格

Power Bipolar Transistor, 25A I(C), 140V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL
JANTXV2N6341 ETC

获取价格

TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 25A I(C) | TO-3