Datasheet > JANTXV2N6660P

JANTXV2N6660P

更新时间： 2024-01-31 15:02:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	125K
描述
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

JANTXV2N6660P 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.72
认证状态：	Not Qualified	Base Number Matches：	1

JANTXV2N6660P 数据手册

2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV

www.vishay.com

Vishay Siliconix

N-Channel 60 V (D-S) MOSFET

FEATURES

• Military Qualified

PRODUCT SUMMARY

V_DS(V)

• Low On-Resistence: 1.3 

• Low Threshold: 1.7 V

• Low Input Capacitance: 35 pF

R_DS(on)() at V_GS= 10 V

Configuration

Single

• Fast Switching Speed: 8 ns

• Low Input and Output Leakage

TO-205AD

(TO-39)

BENEFITS

• Guaranteed Reliability

• Low Offset Voltage

• Low-Voltage Operation

• Easily Driven Without Buffer

• High-Speed Circuits

• Low Error Voltage

APPLICATIONS

• Hi-Rel Systems

• Direct Logic-Level Interface: TTL/CMOS

Top View

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc.

• Battery Operated Systems

• Solid-State Relays

ORDERING INFORMATION

DESCRIPTION/DSCC

PART NUMBER

VISHAY ORDERING

PART NUMBER

PART

PACKAGE

Commercial

2N6660

Commercial, Lead (Pb)-free

2N6660-E3

www.vishay.com/doc?67884

See -2 Flow Document

2N6660-2

JANTX2N6660 (std Au leads)

JANTX2N6660 (with solder)

JANTX2N6660P (with PIND)

JANTXV2N6660 (std Au leads)

JANTXV2N6660P (with PIND)

2N6660JTX02

2N6660JTXL02

2N6660JTXP02

2N6660JTXV02

2N6660JTVP02

TO-205AD

(TO-39)

2N6660JANTX

2N6660JANTXV

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

0.99

0.62

Continuous Drain Current (T_J= 150 °C)

I_D

T_C= 100 °C

Pulsed Drain Current^a

I_DM

P_D

T_C= 25 °C

T_A= 25 °C

6.25

Maximum Power Dissipation

0.725

170

Thermal Resistance, Junction-to-Ambient^b

Thermal Resistance, Junction-to-Case

R_thJA

R_thJC

°C/W

°C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

Notes

a. Pulse width limited by maximum junction temperature.

b. Not required by military spec.

S11-1542-Rev. D, 01-Aug-11

Document Number: 70223

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

下载PDF

与JANTXV2N6660P相关器件

型号	品牌	描述	获取价格	数据表
JANTXV2N6661	VISHAY	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格
JANTXV2N6661B	VISHAY	Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Meta	获取价格
JANTXV2N6674	ETC	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 15A I(C) \| TO-204AA	获取价格
JANTXV2N6675	ETC	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 15A I(C) \| TO-204AA	获取价格
JANTXV2N6676	MICROSEMI	NPN POWER SILICON TRANSISTOR	获取价格
JANTXV2N6676T1	MICROSEMI	Transistor	获取价格