5秒后页面跳转
JANTXV2N6678 PDF预览

JANTXV2N6678

更新时间: 2024-09-23 23:01:23
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
2页 64K
描述
NPN POWER SILICON TRANSISTOR

JANTXV2N6678 数据手册

 浏览型号JANTXV2N6678的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 538  
Devices  
Qualified Level  
JAN  
2N6676  
2N6678  
2N6691  
2N6693  
JANTX  
JANTXV  
MAXIMUM RATINGS  
Ratings  
Symbol  
2N6676 2N6678 Unit  
2N6691 2N6693  
Collector-Emitter Voltage  
Collector-Base Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
300  
450  
450  
400  
650  
650  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
VCEO  
VCBO  
VCEX  
VEBO  
IB  
8.0  
5.0  
15  
2N6676, 2N6678  
TO-3 (TO-204AA)*  
Collector Current  
IC  
2N6676 2N6691  
2N6678 2N6693  
6.0(2)  
175  
3.0(3)  
175  
W
W
Total Power Dissipation  
@ TA = 250C  
PT  
@ TC = 250C(1)  
Operating & Storage Junction Temperature Range  
-65 to +200  
0C  
Top;  
T
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
0C/W  
Thermal Resistance, Junction-to-Case  
1.0  
R
qJC  
2N6691, 2N6693  
TO-61*  
1) Derate linearly 1.0 W/0C for TC > 250C  
2) Derate linearly 34.2 mW/0C for TA > 250C  
3) Derate linearly 17.1 mW/0C for TA > 250C  
* See Appendix A for Package  
Outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 200 mAdc  
Symbol  
Min.  
Max.  
Unit  
Vdc  
300  
400  
2N6676, 2N6691  
2N6678, 2N6693  
V(BR)  
CEO  
Collector-Emitter Cutoff Current  
VCE = 450 Vdc, VBE = 1.5 Vdc  
VCE = 650 Vdc, VBE = 1.5 Vdc  
0.1  
0.1  
mAdc  
2N6676, 2N6691  
2N6678, 2N6693  
ICEX  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

与JANTXV2N6678相关器件

型号 品牌 获取价格 描述 数据表
JANTXV2N6678T1 MICROSEMI

获取价格

Transistor
JANTXV2N6689 ETC

获取价格

TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 15A I(C) | TO-210AC
JANTXV2N6690 ETC

获取价格

TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 15A I(C) | TO-210AC
JANTXV2N6691 MICROSEMI

获取价格

NPN POWER SILICON TRANSISTOR
JANTXV2N6693 MICROSEMI

获取价格

NPN POWER SILICON TRANSISTOR
JANTXV2N6756 INFINEON

获取价格

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A)
JANTXV2N6756 NJSEMI

获取价格

HEXFET TRANSISTORS
JANTXV2N6758 INFINEON

获取价格

POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9A)
JANTXV2N6760 INFINEON

获取价格

TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=1.00ohm, Id=5.5A)
JANTXV2N6762 INFINEON

获取价格

TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)