Datasheet > JANTXV2N6676T1

JANTXV2N6676T1

更新时间： 2024-02-18 07:43:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
31页	468K
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Transistor

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技术参数
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JANTXV2N6676T1 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.03	最大集电极电流 (IC)：	15 A
配置：	Single	最小直流电流增益 (hFE)：	8
最高工作温度：	200 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	175 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

JANTXV2N6676T1 数据手册

The documentation and process conversion measures

necessary to comply with this document shall be

completed by 10 May 2011.

INCH-POUND

MIL-PRF-19500/538F

10 February 2011

SUPERSEDING

MIL-PRF-19500/538E

25 April 2009

PERFORMANCE SPECIFICATION SHEET

* SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,

TYPES 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2N6691, AND 2N6693,

JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCA,

JANKCA, JANKCAM, JANKCAD, JANKCAP, JANKCAL, JANKCAR, JANKCAF, JANKCAG, AND JANKCAH

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors. Four levels

of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product

assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to

eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators “M”, “D”, “P“,

“L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, which have passed RHA requirements.

1.2 Physical dimensions. See figure 1 (TO-3) - 2N6676, 2N6678; figure 2 (TO-61) - 2N6691, 2N6693, figure 3

(TO-254AA) - 2N6676T1, 2N6678T1, figure 4 (TO-257AA) - 2N6676T3, 2N6678T3, and figure 5 (JANHC and

JANKC).

1.3 Maximum ratings.

R_θJC

(2)

Types

P_T

V_CBOand

V_CEX

V_CEO

T_Jand T_STG

T_A= +25°C

T_C= +25°C (1)

175

(3) 125

175

V dc

450

650

450

650

450

650

V dc

300

400

300

400

300

400

°C/W

1.0

1.3

1.0

°C

2N6676, 2N6676T1

2N6678, 2N6678T1

2N6676T3

2N6678T3

2N6691

-65 to +200

2N6693

175

* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,

ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since

contact information can change, you may want to verify the currency of this address information using the

ASSIST Online database at https://assist.daps.dla.mil .

AMSC N/A

FSC 5961

12 3 4 5 6 7...31

中文翻译

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与JANTXV2N6676T1相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N6678	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR
JANTXV2N6678T1	MICROSEMI	获取价格	Transistor
JANTXV2N6689	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 15A I(C) \| TO-210AC
JANTXV2N6690	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 15A I(C) \| TO-210AC
JANTXV2N6691	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR
JANTXV2N6693	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR
JANTXV2N6756	INFINEON	获取价格	TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A)
JANTXV2N6756	NJSEMI	获取价格	HEXFET TRANSISTORS
JANTXV2N6758	INFINEON	获取价格	POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9A)
JANTXV2N6760	INFINEON	获取价格	TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=1.00ohm, Id=5.5A)

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