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JANTXV2N6383 PDF预览

JANTXV2N6383

更新时间： 2024-11-29 00:00:03
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16页 85K
描述
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 10A I(C) | TO-3

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JANTXV2N6383 数据手册

 浏览型号JANTXV2N6383的Datasheet PDF文件第2页浏览型号JANTXV2N6383的Datasheet PDF文件第3页浏览型号JANTXV2N6383的Datasheet PDF文件第4页浏览型号JANTXV2N6383的Datasheet PDF文件第5页浏览型号JANTXV2N6383的Datasheet PDF文件第6页浏览型号JANTXV2N6383的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 10 November 1999.  
INCH-POUND  
MIL-PRF-19500/523B  
10 August 1999  
SUPERSEDING  
MIL-S-19500/523A  
21 July 1993  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER  
TYPES 2N6383, 2N6384, 2N6385, JAN, JANTX, AND JANTXV  
This specification is approved for use by all Depart-  
ments and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product  
assurance are provided for each device type as specified in MIL-PRF-19500.  
1.2 Physical dimensions. See figure 1 (TO-3).  
1.3 Maximum ratings.  
P
1/  
P
2/  
V
CBO  
V
CEO  
V
EBO  
I
C
I
B
T
and  
OP  
T
T
R
Max  
qJC  
T
= +25°C  
T
= +25°C  
T
STG  
A
C
W
W
V dc  
V dc  
V dc  
A dc  
A dc  
°C  
°C/W  
2N6383  
2N6384  
2N6385  
6.0  
6.0  
6.0  
100  
100  
100  
40  
60  
80  
40  
60  
80  
5.0  
5.0  
5.0  
10  
10  
10  
0.25  
0.25  
0.25  
-55 to +175  
-55 to +175  
-55 to +175  
1.75  
1.75  
1.75  
1/ Derate linearly 34.2 mW/°C above T > +25°C.  
A
2/ Derate linearly 571 mW/°C above T > +25°C.  
C
1.4 Primary electrical characteristics.  
Switching  
V = 30 V dc  
CC  
h
V
V
V
C
obo  
|h |  
fe  
FE1  
CE(SAT)1  
CE(SAT)2  
BE(ON)1  
V
= 3.0 V dc  
I
= 5.0 A dc  
I
= 10 A dc  
V
= 3.0 V dc  
V
CB  
= 10 V dc  
V
I
= 5.0 V dc  
CE  
C
C
CE  
CE  
I
= 5.0 A dc  
1/  
I
B
= 10 mA dc  
1/  
I
= 0.1 A dc  
1/  
I
= 5.0 A dc  
1/  
I
E
= 0  
= 1.0 A dc  
f = 1 MHz  
I
= 5.0 A dc  
C
B
C
C
CC  
100 kHz < f £ 1 MHz  
I
B1  
= 20 mA dc  
t
on  
t
f
of  
V dc  
2.0  
V dc  
3.0  
V dc  
2.8  
pF  
ms  
ms  
Min  
Max  
1,000  
20,000  
20  
300  
200  
2.5  
10.0  
1/ Pulsed, see 4.5.1  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document  
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street, Columbus, OH  
43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or  
by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
1234567...16

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 		TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 10A I(C) | TO-3

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