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JANTX2N5745 PDF预览

JANTX2N5745

更新时间： 2024-09-30 00:00:03
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16页 85K
描述
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 20A I(C) | TO-3

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JANTX2N5745 数据手册

 浏览型号JANTX2N5745的Datasheet PDF文件第2页浏览型号JANTX2N5745的Datasheet PDF文件第3页浏览型号JANTX2N5745的Datasheet PDF文件第4页浏览型号JANTX2N5745的Datasheet PDF文件第5页浏览型号JANTX2N5745的Datasheet PDF文件第6页浏览型号JANTX2N5745的Datasheet PDF文件第7页 
This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly  
different in format due to electronic conversion processes. Actual technical content will be the same.  
The documentation and process conversion  
measures necessary to comply with this  
revision shall be completed by 1 October 1998  
INCH-POUND  
MIL-PRF-19500/433E  
1 July 1998  
SUPERSEDING  
MIL-S-19500/433D  
1 December 1993  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER  
TYPE 2N4399 AND 2N5745 JAN, JANTX, JANTXV, AND JANS  
This Specification is approved for use by all Depart-  
ments and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for PNP silicon, high-power transistors. Four levels of product  
assurance are provided for each device type as specified in MIL-PRF-19500.  
1.2 Physical dimensions. See figure 1, (TO - 3).  
1.3 Maximum ratings. R  
= 0.875°C/W, R  
= 35°C/W.  
qJA  
qJC  
P
T
1/  
P
T
2/  
V
CBO  
V
CEO  
V
EBO  
I
B
I
C
T
and T  
STG  
J
T
= +25°C  
T
= +100°C  
C
A
W
W
V dc  
V dc  
V dc  
A dc  
A dc  
°C  
2N4399  
2N5745  
5
5
115  
115  
60  
80  
60  
80  
5
5
7.5  
7.5  
30  
20  
-55 to +200  
-55 to +200  
1/ Derate linearly 28.57 mW/°C above T = +25°C.  
A
2/ Derate linearly 1.15 W/°C above T = +100°C.  
C
1.4 Primary electrical characteristics.  
Switching  
H
h
|h  
|
V
V
C
C
FE2  
1/  
FE2  
1/  
FE  
CE(sat)1  
BE(sat)1  
obo  
1/  
1/  
V
= 2 V dc  
V
= 2 V dc  
V
= 10 V dc  
= 1 A dc  
f = 1 MHz  
I
I
= 15 A dc  
= 1.5 A dc  
I
I
= 15 A dc  
= 1.5 A dc  
V
= 10 V  
t
on  
t
off  
CE  
CE  
CE  
C
B
CB  
dc  
= 0  
I
C
= 15 A dc  
I
C
= 10 A dc  
I
C
B
I
E
100 kHz  
£ f £ 1 MHz  
2N4399  
25  
2N5745  
25  
2N4399 2N5745  
2N4399  
1.8  
2N5745  
2.0  
pF  
ms  
ms  
V dc  
V dc  
V dc  
Min  
Max  
4
40  
1.0  
1.5  
1,000  
1.2  
2.5  
|1/ Pulsed (see 4.5.1).  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this  
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street,  
Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end  
of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
1234567...16

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 		Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, SIMILAR
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JANTX2N5796U MICROSEMI

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