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JANTX2N3585 PDF预览

JANTX2N3585

更新时间: 2024-11-29 22:57:27
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美高森美 - MICROSEMI 晶体晶体管局域网高功率电源
页数 文件大小 规格书
2页 59K
描述
NPN HIGH POWER SILICON TRANSISTOR

JANTX2N3585 数据手册

 浏览型号JANTX2N3585的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN HIGH POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 384  
Devices  
Qualified Level  
JAN  
2N3584  
2N3585  
JANTX  
JANTXV  
MAXIMUM RATINGS  
Symbol  
2N3585  
Ratings  
2N3584  
250  
Units  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector-Emitter Voltage  
Collector-Base Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
300  
500  
400  
VCEO  
VCBO  
VCER  
VEBO  
IB  
375  
300  
6.0  
1.0  
2.0  
Collector Current  
IC  
Total Power Dissipation  
@ TA = +250C (1)  
@ TC = +250C (2)  
2.5  
35  
W
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
0C/W  
TO-66* (TO-213AA)  
Thermal Resistance, Junction-to-Case  
5.0  
R
qJC  
1) Derate linearly @ 14.85 mW/0C for TA > +250C  
2) Derate linearly @ 200 mW/0C for TC > +250C  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 10 mAdc  
Symbol  
Min.  
Max.  
Unit  
Vdc  
Vdc  
250  
300  
2N3584  
2N3585  
V(BR)  
CEO  
Collector-Base Breakdown Voltage  
IC = 15 mAdc  
375  
500  
2N3584  
2N3585  
V(BR)  
CER  
Collector-Emitter Cutoff Current  
VCE = 150 Vdc  
5.0  
mAdc  
mAdc  
ICEO  
ICEX  
Collector-Emitter Cutoff Current  
VCE = 300 Vdc, VBE = 1.5 Vdc  
VCE = 400 Vdc, VBE = 1.5 Vdc  
Emitter-Base Cutoff Current  
VEB = 6.0 Vdc  
1.0  
1.0  
2N3584  
2N3585  
0.5  
mAdc  
IEBO  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  
2N3584, 2N3585 JAN SERIES  

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