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JANTX2N3636UB PDF预览

JANTX2N3636UB

更新时间： 2024-12-01 05:04:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 开关晶体管
页数 文件大小 规格书
35页 777K
描述
Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3

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JANTX2N3636UB 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Transferred包装说明：CERAMIC PACKAGE-3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.61最大集电极电流 (IC)：1 A
集电极-发射极最大电压：175 V配置：SINGLE
最小直流电流增益 (hFE)：30JESD-30 代码：R-CDSO-N3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：200 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP最大功率耗散 (Abs)：1 W
认证状态：Qualified参考标准：MIL-19500/357
子类别：Other Transistors表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：NO LEAD
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
最大关闭时间（toff）：650 ns最大开启时间（吨）：200 ns

JANTX2N3636UB 数据手册

 浏览型号JANTX2N3636UB的Datasheet PDF文件第2页浏览型号JANTX2N3636UB的Datasheet PDF文件第3页浏览型号JANTX2N3636UB的Datasheet PDF文件第4页浏览型号JANTX2N3636UB的Datasheet PDF文件第5页浏览型号JANTX2N3636UB的Datasheet PDF文件第6页浏览型号JANTX2N3636UB的Datasheet PDF文件第7页 
INCH-POUND  
The documentation and process conversion measures  
necessary to comply with this document shall be  
completed by 6 August 2013.  
MIL-PRF-19500/357M  
6 May 2013  
SUPERSEDING  
MIL-PRF-19500/357L  
17 July 2010  
PERFORMANCE SPECIFICATION SHEET  
* SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER,  
TYPES 2N3634 THROUGH 2N3637, 2N3634UB THROUGH 2N3637UB, 2N3634UBN THROUGH 2N3637UBN,  
2N3634L THROUGH 2N3637L, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF,  
JANSG, JANSH, JANHCA, JANKCA, JANKCAM, JANKCAD, JANKCAP, JANKCAL, JANKCAR, JANKCAF,  
JANKCAG, JANKCAH, JANHCB, JANKCB, JANKCBM, JANKCBD, JANKCBP, JANKCBL,  
JANKCBR, JANKCBF, JANKCBG, AND JANKCBH  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for PNP, silicon, low-power amplifier, and  
switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified  
in MIL-PRF-19500 and two levels of product assurance are provided for unencapsulated devices. RHA level  
designators “M”, “D”, “P“, “L”, “R”, “F’, “G”, and “H” are appended to the device prefix to identify devices, which have  
passed RHA requirements.  
*
1.2 Physical dimensions. See figure 1 (TO-5 and TO-39), figure 2 (UB and UBN), and figures 3 and 4 (JANHC  
and JANKC).  
*
1.3 Maximum ratings. Unless otherwise specified TA = +25°C.  
PT (1)  
TA =  
+25°C  
W
PT (2)  
TC =  
+25°C  
W
PT (3)  
TSP  
+25°C  
IC  
TJ and  
TSTG  
VCBO  
V dc  
VCEO  
V dc  
VEBO  
V dc  
RθJA  
(4)  
RθJC  
(4)  
RθJSP  
(4)  
Types  
=
W
A dc  
°C/W  
°C/W  
°C/W  
°C  
2N3634, 2N3634L  
2N3634UB and UBN  
2N3635, 2N3635L  
2N3635UB and UBN  
2N3636, 2N3636L  
2N3636UB and UBN  
2N3637, 2N3637L  
2N3637UB and UBN  
1
0.5  
1
0.5  
1
0.5  
1
0.5  
5
N/A  
5
N/A  
5
N/A  
5
N/A  
N/A  
1.5  
N/A  
1.5  
N/A  
1.5  
N/A  
1.5  
1
1
1
1
1
1
1
1
140  
140  
140  
140  
175  
175  
175  
175  
140  
140  
140  
140  
175  
175  
175  
175  
5
5
5
5
5
5
5
5
175  
325  
175  
325  
175  
325  
175  
325  
35  
N/A  
35  
N/A  
35  
N/A  
35  
N/A  
N/A  
90  
N/A  
90  
N/A  
90  
N/A  
90  
-65 to  
+200  
* (1) See figure 5 and 6.  
* (2) See figure 7.  
* (3) See figure 8.  
* (4) See figures 9, 10, and 11.  
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,  
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil . Since  
contact information can change, you may want to verify the currency of this address information using the  
ASSIST Online database at https://assist.dla.mil .  
AMSC N/A  
FSC 5961  
 
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与JANTX2N3636UB相关器件

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JANTX2N3637 ONSEMI

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 		MIL-PRF-19500/357: 175 V, 1 A PNP Small Signal Transistor, TO-39 3-Lead, 100-BLKBX, Milita
JANTX2N3637 MICROSEMI

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 		PNP SILICON AMPLIFIER TRANSISTOR
JANTX2N3637 RAYTHEON

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 		Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-39,
JANTX2N3637L ONSEMI

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 		MIL-PRF-19500/357: 175 V, 1 A PNP Small Signal Transistor, TO-5 3-Lead, 100-BLKBX, Militar
JANTX2N3637L MICROSEMI

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 		PNP SILICON AMPLIFIER TRANSISTOR
JANTX2N3637UB MICROSEMI

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 		Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC
JANTX2N3700 MICROSEMI

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 		LOW POWER NPN SILICON TRANSISTOR
JANTX2N3700 ONSEMI

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 		MIL-PRF-19500/391: 80 V, 1 A NPN Small Signal Transistor
JANTX2N3700S MICROSEMI

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 		LOW POWER NPN SILICON TRANSISTOR
JANTX2N3700UB ETC

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 		TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C)

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