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JANTX2N3468L PDF预览

JANTX2N3468L

更新时间: 2024-09-16 12:46:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体开关小信号双极晶体管
页数 文件大小 规格书
2页 59K
描述
PNP SILICON SWITCHING TRANSISTOR

JANTX2N3468L 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-5
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.24
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):25
JEDEC-95代码:TO-5JESD-30 代码:O-MBCY-W3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):1 W
认证状态:Qualified参考标准:MIL-19500/348E
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHz最大关闭时间(toff):90 ns
最大开启时间(吨):40 nsBase Number Matches:1

JANTX2N3468L 数据手册

 浏览型号JANTX2N3468L的Datasheet PDF文件第2页 
TECHNICAL DATA  
PNP SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/ 348  
Devices  
Qualified Level  
JAN  
JANTX  
JANTXV  
2N3467  
2N3467L  
2N3468  
2N3468L  
MAXIMUM RATINGS  
2N3467  
2N3467L 2N3468L  
2N3468  
Ratings  
Symbol  
Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
40  
50  
Vdc  
Vdc  
Vdc  
Adc  
VCEO  
VCBO  
VEBO  
IC  
TO-39* (TO-205AD)  
2N3467, 2N3468  
40  
50  
5.0  
1.0  
Total Power Dissipation  
@ TA = +250C(1)  
@ TC = +250C(2)  
1.0  
5.0  
W
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-55 to +175  
Top, T  
stg  
TO-5*  
2N3467L, 2N3468L  
1) Derate linearly 5.71 mW/0C for TA > +250C  
2) Derate linearly 28.6 mW/0C for TC > +250C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Current  
IC = 10 mAdc  
40  
50  
Vdc  
Vdc  
Vdc  
2N3467, L  
2N3468, L  
V(BR)  
CBO  
Emitter-Base Breakdown Current  
IE = 10 mAdc  
Collector-Emitter Breakdown Current  
IC = 10 mAdc  
V(BR)  
EBO  
5.0  
40  
50  
2N3467, L  
2N3468, L  
V(BR)  
CEO  
Collector-Base Cutoff Current  
VCB = 30 Vdc  
Collector-Emitter Cutoff Current  
VEB = 3.0 Vdc, VCE = 30  
ICBO  
ICEX  
hAdc  
100  
100  
nAdc  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

JANTX2N3468L 替代型号

型号 品牌 替代类型 描述 数据表
JANTX2N3468 MICROSEMI

完全替代

PNP SILICON SWITCHING TRANSISTOR
2N3468 MICROSEMI

完全替代

PNP SILICON SWITCHING TRANSISTOR
JANTXV2N3468L MICROSEMI

功能相似

PNP SILICON SWITCHING TRANSISTOR

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