Datasheet > JANTX2N3227

JANTX2N3227

更新时间： 2024-11-06 00:00:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
20页	144K
描述
TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 200MA I(C) \| TO-18

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JANTX2N3227 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 8 June 2001

INCH POUND

MIL-PRF-19500/317J

9 March 2001

SUPERSEDING

MIL-PRF-19500/317H

8 September 2000

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING,

TYPES 2N2369A, 2N3227, 2N4449, 2N2369AU, 2N3227U, 2N4449U,

2N2369AUA, 2N3227UA, 2N4449UA, 2N2369AUB, 2N3227UB, and 2N4449UB

JAN JANTX, JANTXV, JANS, JANHC AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, high speed switching

transistors (including dual devices). Four levels of product assurance are provided for each device type as specified

in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. Figure 1 (TO-18) for 2N2369A and 2N3227, figure 2 (TO-46) for 2N4449, figure 3 for UB

version, figure 4 for UA version, figure 5 for U version (dual devices), and figure 6 and 7 (JANC).

1.3 Maximum ratings.

Types

P_T

V_CBO

V dc

V_EBO

V dc

V_CEO

V dc

V_CES

V dc

T_{OP &}

T_STG

R_q

T_A= +25°C

°C/W

°C

2N2369A

2N3227

2N4449

0.36 (1)

4.5

6.0

4.5

325

-65

+200

All UA

All UB

All U

0.5 (2)

0.4 (3)

0.5 (4)

210

325

291

(1) Derate linearly 2.06 mW/°C above T_A= +25°C.

(2) Derate linearly 4.76 mW/°C above T_C= +95°C.

(3) Derate linearly 3.08 mW/°C above T_C= +70°C.

(4) Derate linearly 3.44 mW/°C above T_A= +54.5°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,

Post Office Box 3990, Columbus, OH 43213-1999, by using the Standardization Document Improvement

Proposal (DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...20

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与JANTX2N3227相关器件

型号	品牌	获取价格	描述	数据表
JANTX2N3227UB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 20V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, C
JANTX2N3250A	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-18,
JANTX2N3250AUB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC
JANTX2N3251A	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-18,
JANTX2N3251A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205A
JANTX2N3375	MOTOROLA	获取价格	RF Power Bipolar Transistor, 1-Element, Silicon, NPN, TO-60, TO-60, 3 PIN
JANTX2N3418	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI
JANTX2N3418S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C)
JANTX2N3418U4	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC
JANTX2N3419	VISHAY	获取价格	Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 P

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