Datasheet > JANTX2N3439L

JANTX2N3439L

更新时间： 2024-11-30 00:00:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
21页	138K
描述
TRANSISTOR \| BJT \| NPN \| 350V V(BR)CEO \| 1A I(C) \| TO-5

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JANTX2N3439L 数据手册

INCH-POUND

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 8 October 2002.

MIL-PRF-19500/368F

8 July 2002

SUPERSEDING

MIL-PRF-19500/368E

24 August 2001

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER

TYPES: 2N3439, 2N3439L, 2N3439UA, 2N3440, 2N3440L AND 2N3440UA,

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage

transistors. Four levels of product assurance are provided for each encapsulated device types as specified in

MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

* 1.2 Physical dimensions. See figure 1 (similar to TO-5 and TO-39), figure 2 (JANHCA and JANKCA (A versions)),

figure 3 (JANHCB and JANKCB (B versions)), and figure 4 (2N3439UA and 2N3440UA surface mount versions).

* 1.3 Maximum ratings. Unless otherwise specified, T_A= +25°C.

Types

and T

(1)

(2)

θJA

CBO

EBO

CEO

STG

= +25°C

V dc

450

V dc

350

A dc

1.0

°C

°C/W

2N3439, 2N3439L,

2N3439UA

0.8

5.0

-65 to +200

325

2N3440, 2N3440L

2N3440UA

0.8

5.0

300

250

1.0

325

(1) Derate linearly 5.7 mW/°C for T_A> +60°C.

(2) Derate linearly 28.6 mW/°C for T_C> +25°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC,

P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...21

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型号	品牌	获取价格	描述	数据表
JANTX2N3439U4	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COM
JANTX2N3439UA	ETC	获取价格	BJT
JANTX2N3440	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 250V V(BR)CEO \| 1A I(C) \| TO-5
JANTX2N3440L	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 250V V(BR)CEO \| 1A I(C) \| TO-5
JANTX2N3440U4	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC
JANTX2N3440UA	ETC	获取价格	BJT
JANTX2N3441	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR
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JANTX2N3467	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-39,