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JANTX2N3441 PDF预览

JANTX2N3441

更新时间: 2024-11-29 22:57:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率双极晶体管局域网
页数 文件大小 规格书
2页 58K
描述
NPN POWER SILICON TRANSISTOR

JANTX2N3441 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-66
包装说明:TO-66, 2 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.24
最大集电极电流 (IC):3 A集电极-发射极最大电压:140 V
配置:SINGLE最小直流电流增益 (hFE):25
JEDEC-95代码:TO-66JESD-30 代码:O-MBFM-P2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Qualified
参考标准:MIL-19500/369C表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

JANTX2N3441 数据手册

 浏览型号JANTX2N3441的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 369  
Devices  
Qualified Level  
2N3441  
JANTX  
MAXIMUM RATINGS  
Ratings  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VCER  
VEBO  
IB  
Value  
140  
160  
150  
7.0  
Units  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Base Current  
2.0  
3.0  
Collector Current  
IC  
Total Power Dissipation  
@ TA = +250C (1)  
@ TC = +250C (2)  
3.0  
25  
W
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
TO-66* (TO-213AA)  
Symbol  
Max.  
Unit  
0C/W  
R
Thermal Resistance, Junction-to-Case  
Junction-to-Ambient  
7.0  
58.5  
qJC  
0C/W  
R
qJA  
1) Derate linearly @ 17.1 mW/0C for TA > +250C  
2) Derate linearly @ 143 mW/0C for TC > +250C  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Voltage  
IC = 100 mAdc  
140  
150  
160  
Vdc  
Vdc  
V(BR)  
CEO  
Collector-Emitter Breakdown Voltage  
IC = 100 mAdc, RBE = 100 W  
Collector-Emitter Breakdown Voltage  
IC = 100 mAdc, VBE = -1.5 Vdc  
Collector-Base Cutoff Current  
VCB = 140 Vdc, VBE = -1.5 Vdc  
Emitter-Base Cutoff Current  
V(BR)  
CER  
Vdc  
V(BR)  
CEX  
1.0  
1.0  
mAdc  
mAdc  
ICEX  
IEBO  
VEB = 7.0 Vdc  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

JANTX2N3441 替代型号

型号 品牌 替代类型 描述 数据表
2N6338G ONSEMI

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