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JANTX2N3419 PDF预览

JANTX2N3419

更新时间: 2024-11-30 20:17:55
品牌 Logo 应用领域
威世 - VISHAY 晶体管
页数 文件大小 规格书
2页 80K
描述
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin

JANTX2N3419 技术参数

生命周期:Transferred包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.05最大集电极电流 (IC):3 A
基于收集器的最大容量:150 pF集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-5JESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN功耗环境最大值:15 W
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):40 MHz最大关闭时间(toff):1200 ns
最大开启时间(吨):300 nsVCEsat-Max:0.5 V
Base Number Matches:1

JANTX2N3419 数据手册

 浏览型号JANTX2N3419的Datasheet PDF文件第2页 

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JANTX2N3419S ETC

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TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-39
JANTX2N3419U4 MICROSEMI

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Small Signal Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC
JANTX2N3420 VISHAY

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JANTX2N3420 APITECH

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Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5
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Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI
JANTX2N3420S ETC

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TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-5
JANTX2N3420U4 MICROSEMI

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Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC
JANTX2N3421 APITECH

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Small Signal Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI
JANTX2N3421 MICROSEMI

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Small Signal Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI
JANTX2N3421 VISHAY

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Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 P