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JANTX2N3419S

更新时间： 2024-11-30 00:00:03
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21页 134K
描述
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-39

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 浏览型号JANTX2N3419S的Datasheet PDF文件第2页浏览型号JANTX2N3419S的Datasheet PDF文件第3页浏览型号JANTX2N3419S的Datasheet PDF文件第4页浏览型号JANTX2N3419S的Datasheet PDF文件第5页浏览型号JANTX2N3419S的Datasheet PDF文件第6页浏览型号JANTX2N3419S的Datasheet PDF文件第7页 
INCH-POUND  
The documentation and process conversion  
measures necessary to comply with this  
revision shall be completed by 25 August 2001.  
MIL-PRF-19500/393D  
25 May 2001  
SUPERSEDING  
MIL-PRF-19500/393C  
20 April 2000  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER  
TYPES 2N3418, 2N3418S, 2N3419, 2N3419S, 2N3420, 2N3420S, 2N3421, 2N3421S  
JAN, JANTX, JANTXV, JANS, JANHC, and JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
1.1. Scope. This specification covers the performance requirements for NPN, silicon, transistors for use in  
medium power switching applications. Four levels of product assurance are provided for each device type, and two  
levels of product assurance for die (element evaluation) are provided, as specified in MIL-PRF-19500.  
1.2. Physical dimensions. See figure 1 (similar to TO-5 for long leaded devices and TO-39 for short leaded  
devices), figure 2, and figure 3 for JANHC and JANKC (die) dimensions.  
1.3. Maximum ratings.  
Type  
P
P
V
V
V
I
I
T
and T  
OP  
T
T
CBO  
CEO  
EBO  
C
C
STG  
T
= +25°C  
(1)  
T
= +100°C  
C
(3)  
A
(2)  
W
W
V dc  
85  
V dc  
60  
V dc  
A dc  
A dc  
°C  
2N3418, 2N3418S  
2N3419, 2N3419S  
2N3420, 2N3420S  
2N3421, 2N3421S  
1.0  
15  
15  
15  
15  
8
8
8
8
3
3
3
3
5
5
5
5
-65 to +200  
-65 to +200  
-65 to +200  
-65 to +200  
1.0  
125  
85  
80  
1.0  
60  
1.0  
125  
80  
(1) Derate linearly at 5.72 mW/°C above TA > +25°C.  
(2) Derate linearly at 150 mW/°C above TC > +100°C.  
(3) This value applies for tp ≤ 1 ms, duty cycle ≤ 50 percent.  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in  
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, Post  
Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD  
Form 1426) appearing at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
1234567...21

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与JANTX2N3419S相关器件

型号 品牌 获取价格 描述 数据表
JANTX2N3419U4 MICROSEMI

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 		Small Signal Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC
JANTX2N3420 VISHAY

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 		Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 P
JANTX2N3420 APITECH

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 		Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5
JANTX2N3420 MICROSEMI

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 		Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI
JANTX2N3420S ETC

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 		TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-5
JANTX2N3420U4 MICROSEMI

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 		Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC
JANTX2N3421 APITECH

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 		Small Signal Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI
JANTX2N3421 MICROSEMI

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 		Small Signal Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI
JANTX2N3421 VISHAY

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 		Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 P
JANTX2N3421S ETC

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 		TRANSISTOR | BJT | NPN | 80V V(BR)CEO | TO-5

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