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JANTX2N3251A PDF预览

JANTX2N3251A

更新时间: 2024-11-06 20:34:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 开关晶体管
页数 文件大小 规格书
4页 135K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-18, 3 PIN

JANTX2N3251A 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BCY
包装说明:TO-18, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.88
外壳连接:COLLECTOR最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):90JEDEC-95代码:TO-205AD
JESD-30 代码:O-MBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:175 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):1.2 W认证状态:Not Qualified
参考标准:MIL-19500/323H子类别:Other Transistors
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
最大关闭时间(toff):300 ns最大开启时间(吨):70 ns
Base Number Matches:1

JANTX2N3251A 数据手册

 浏览型号JANTX2N3251A的Datasheet PDF文件第2页浏览型号JANTX2N3251A的Datasheet PDF文件第3页浏览型号JANTX2N3251A的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
PNP SILICON  
LOW POWER TRANSISTOR  
Qualified per MIL-PRF-19500/323  
DEVICES  
LEVELS  
2N3250A  
2N3251A  
JAN  
2N3250AUB  
2N3251AUB  
JANTX  
JANTXV  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
60  
Unit  
Vdc  
Collector-Base Voltage  
Emitter-Base Voltage  
60  
Vdc  
5.0  
Vdc  
Collector Current  
200  
mAdc  
Total Power Dissipation  
@ TA = +25°C (1)  
@ TC = +25°C (1)  
0.36  
1.2  
PT  
W
Operating & Storage Junction Temperature Range  
TJ, Tstg  
-65 to +200  
°C  
TO-39 (TO-205AD)  
THERMAL CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Max.  
Unit  
(1)  
Thermal Resistance, Junction-to-Case  
150  
°C/W  
RθJC  
Note:  
1/ Consult 19500/323 for thermal curves  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERTICS  
Collector-Emitter Breakdown Voltage  
IC = 10mAdc  
Symbol  
V(BR)CEO  
ICEX  
Min.  
Max.  
Unit  
60  
Vdc  
Collector-Emitter Cutoff Voltage  
V
BE = 3.0Vdc, VCE = 40Vdc  
20  
20  
ηAdc  
μAdc  
UB Package  
VBE = 3.0Vdc, VCE = 40Vdc  
TA = 150°C  
Collector-Base Cutoff Current  
10  
20  
μAdc  
ηAdc  
V
CB = 60Vdc  
ICBO  
VCB = 40Vdc  
Emitter-Base Cutoff Current  
IEBO  
10  
50  
μAdc  
ηAdc  
V
EB = 5.0Vdc  
Collector-Emitter Cutoff Voltage  
IBEX  
V
BE = 3.0Vdc, VCE = 40Vdc  
T4-LDS-0093 Rev. 2 (101243)  
Page 1 of 4  

JANTX2N3251A 替代型号

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