是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-3 |
包装说明: | TO-3, 2 PIN | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.18 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 15 A | 集电极-发射极最大电压: | 70 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 20 |
JEDEC-95代码: | TO-3 | JESD-30 代码: | O-MBFM-P2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 200 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Qualified |
参考标准: | MIL-19500/407D | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2N3055AG | ONSEMI |
功能相似 |
Complementary Silicon High-Power Transistors | |
2N3055G | ONSEMI |
功能相似 |
Complementary Silicon Power Transistors |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTX2N3057A | MICROSEMI |
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LOW POWER NPN SILICON TRANSISTOR | |
JANTX2N3057A | RAYTHEON |
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Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-46, | |
JANTX2N3227 | ETC |
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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-18 | |
JANTX2N3227UB | MICROSEMI |
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Small Signal Bipolar Transistor, 20V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, C | |
JANTX2N3250A | RAYTHEON |
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Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-18, | |
JANTX2N3250AUB | MICROSEMI |
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Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC | |
JANTX2N3251A | RAYTHEON |
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Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-18, | |
JANTX2N3251A | MICROSEMI |
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Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205A | |
JANTX2N3375 | MOTOROLA |
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RF Power Bipolar Transistor, 1-Element, Silicon, NPN, TO-60, TO-60, 3 PIN | |
JANTX2N3418 | MICROSEMI |
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Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI |