Datasheet > JANSR2N7506U8C

JANSR2N7506U8C

更新时间： 2024-01-03 09:50:09

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	950K
描述
Rad hard, -100V, -3.1A, single, P-channel MOSFET, R5 in a SMD-0.2 package

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JANSR2N7506U8C 数据手册

IRHNM597110, IRHNMC597110

Radiation Hardened Power MOSFET Surface-Mount (SMD-0.2)

Device Characteristics

2.4.2

Single Event Effects — Safe Operating Area

IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event

Effects (SEE). Single Event Effects characterization is illustrated in Fig. 1 and Table 7.

Table 7

Worst Case Single Event Effects Safe Operating Area

V_DS(V)

V_GS= 10V

LET

Energy

(MeV)

Range

(µm)

(MeV·cm²/mg)

V_GS= 0V V_GS= 5V

V_GS= 15V

-100

V_GS= 20V

-100

-25

38 ± 5%

270 ± 7.5%

330 ± 7.5%

350 ± 7.5%

35 ± 7.5%

30 ± 7.5%

28 ± 7.5%

-100

61 ± 5%

-100

84 ± 5%

-30

—

Figure 1

Worst Case Single Event Effect, Safe Operating Area

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2022-06-30

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