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JANKCA2N5339 PDF预览

JANKCA2N5339

更新时间: 2024-02-08 18:05:30
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
20页 130K
描述
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-39

JANKCA2N5339 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:DIE包装说明:UNCASED CHIP, S-XUUC-N
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.40风险等级:5.32
Is Samacsys:N最大集电极电流 (IC):5 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):60JESD-30 代码:S-XUUC-N
JESD-609代码:e0元件数量:1
最高工作温度:175 °C封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:UNCASED CHIP
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):6 W认证状态:Not Qualified
参考标准:MIL-19500/560F子类别:Other Transistors
表面贴装:YES端子面层:TIN LEAD
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz
最大关闭时间(toff):2200 ns最大开启时间(吨):200 ns
Base Number Matches:1

JANKCA2N5339 数据手册

 浏览型号JANKCA2N5339的Datasheet PDF文件第2页浏览型号JANKCA2N5339的Datasheet PDF文件第3页浏览型号JANKCA2N5339的Datasheet PDF文件第4页浏览型号JANKCA2N5339的Datasheet PDF文件第5页浏览型号JANKCA2N5339的Datasheet PDF文件第6页浏览型号JANKCA2N5339的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 6 June 2002.  
INCH-POUND  
MIL-PRF-19500/560E  
6 March 2002  
SUPERSEDING  
MIL-PRF-19500/560D  
3 January 2001  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING  
TYPE 2N5339 AND 2N5339U3 JAN, JANTX, JANTXV, JANS, JANHC AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for NPN silicon switching transistors. Four  
levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two  
levels of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500.  
1.2 Physical dimensions. See figure 1 (TO-39), figures 2, 3, and 4 for JANHC and JANKC (die) and figure 5 for  
U3 devices (TO-276AA) dimensions.  
1.3 Maximum ratings.  
Types  
PT (1)  
TA =  
+25°C  
PT (2)  
TC =  
+25°C  
VCBO  
V dc  
VCEO  
V dc  
VEBO  
V dc  
IC  
IB  
TOP and TSTG  
R
qJC  
W
W
A dc  
A dc  
°C  
°C/W  
2N5339  
2N5339U3  
1.0  
1.0  
100  
100  
100  
100  
6.0  
6.0  
5.0  
5.0  
1.0  
1.0  
-65 to +200  
-65 to +200  
17.5  
12.5  
100  
(1) Derate linearly at 5.71 mW/°C above TA > +25°C.  
(2) Derate linearly from 80 mW/°C to 571 mW°C.  
1.4 Primary electrical characteristics TA = +25°C. (Unless otherwise indicated, applies to all devices.)  
hFE1 (1)  
hFE2 (1)  
hFE3 (1)  
VCE = 2.0 V dc; IC = 5.0 A dc  
Limits  
VCE = 2.0 V dc; IC = 0.5 A dc VCE = 2.0 V dc; IC = 2.0 A dc  
Min  
60  
60  
40  
Max  
240  
(1) Pulsed (see 4.5.1).  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in  
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.  
Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD  
Form 1426) appearing at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  

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