Datasheet > JANKCAR2N7425

JANKCAR2N7425

更新时间： 2023-01-03 05:48:52

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
22页	232K
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Transistor

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JANKCAR2N7425 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	Base Number Matches：	1

JANKCAR2N7425 数据手册

The documentation and process conversion measures

necessary to comply with this document shall be

completed by 6 February 2014.

INCH-POUND

MIL-PRF-19500/660E

6 December 2013

SUPERSEDING

MIL-PRF-19500/660D

11 February 2013

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED

TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426,

JANTXVR, JANTXVF, JANSR, AND JANSF

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode,

MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type

as specified in MIL-PRF-19500, with avalanche energy maximum rating (E_AS) and maximum avalanche current (I_AS).

See 6.5 for JANHC and JANKC die versions.

1.2 Physical dimensions. See figure 1, TO-254AA.

1.3 Maximum ratings. Unless otherwise specified, T_A= +25^oC.

Type

P_T(1)

T_C=

+25°C

P_T

T_A=

+25°C

V_DS

V_DG

V_GS

I_D1(3) (4) I_D2(3)(4)

I_S

I_DM

(5)

T_J

and

T_STG

R _θJC

(2)

T_C=

T_C=+25°C

+100°C

V dc

A dc

A (pk)

°C/W

°C

2N7424

2N7425

2N7426

250

3.0

-60

-35

-27

-30

-24

-17

-35

-27

-140

-108

0.50

±20

-55

+150

-100

-200

-100

-200

(1) Derate linearly 2.0 W/°C for T_C> +25°C.

(2) See figure 2, thermal impedance curves.

(3) The following formula derives the maximum theoretical I_Dlimit. I_Dis limited by package and internal

construction.

T_JMT_C

( on ) at

T_JM

I_D

(

)

(

)

R_θJC

R_DS

(4) See figure 3, maximum drain current graphs.

(5) I_DM= 4 x I_D1as calculated in note 3.

Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,

ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact

information can change, you may want to verify the currency of this address information using the ASSIST

Online database at https://assist.dla.mil.

AMSC N/A

FSC 5961

12 3 4 5 6 7...22

中文翻译

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与JANKCAR2N7425相关器件

型号	品牌	获取价格	描述	数据表
JANKCB1N6331	SENSITRON	获取价格	Zener Diode,
JANKCB1N6335	SENSITRON	获取价格	Zener Diode,
JANKCB1N6341	SENSITRON	获取价格	Zener Diode,
JANKCB1N6344	SENSITRON	获取价格	Zener Diode,
JANKCB1N6350	SENSITRON	获取价格	Zener Diode,
JANKCB2N2484	STMICROELECTRONICS	获取价格	SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB
JANKCB2N2905	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-205A
JANKCB2N2906A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, DIE-3
JANKCB2N2907A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, DIE-3
JANKCBF2N2904	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-205A

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