Datasheet > JANKCA2N6849

JANKCA2N6849

更新时间： 2024-09-25 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
22页	131K
描述
TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 6.5A I(D) \| TO-205AF

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JANKCA2N6849 数据手册

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 22 March 1998.

INCH-POUND

MIL-PRF-19500/564E

22 December 1997

SUPERSEDING

MIL-S-19500/564D

9 December 1994

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON

TYPES 2N6849, 2N6849U, 2N6851 AND 2N6851U

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor.

Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product

assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figures 1 and 2, TO-205AF (formerly TO-39), 3 (LCC), and figures 4, 5, and 6 for JANHC and JANKC

die dimensions.

1.3 Maximum ratings. Unless otherwise specified, T = +25 C.

Type

T and

= +25 C

= +100 C

STG

V dc

A dc

A(pk)

2N6849

2N6851

0.8

-100

-200

-100

-200

-6.5

-4.0

-4.1

-2.4

-6.5

-4.0

-25

-20

-55 to +150

1/ Derate linearly 0.2 W/ C for T > +25 C.

- T

J max C

T_{J max}

) x (

T_C

I_D

(

)

R_θ

T_Jmax

DS_on

3/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...22

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与JANKCA2N6849相关器件

型号	品牌	获取价格	描述	数据表
JANKCA2N6851	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 4A I(D) \| TO-205AF
JANKCA2N7219	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
JANKCA2N7236	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 18A I(D) \| TO-254AA
JANKCA2N7237	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 11A I(D) \| TO-254AA
JANKCAF2N7383	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide
JANKCAH2N7261	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 8A I(D) \| TO-205AF
JANKCAH2N7262	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 5.5A I(D) \| TO-205AF
JANKCAH2N7268	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 34A I(D) \| TO-254AA
JANKCAH2N7269	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 26A I(D) \| TO-254AA
JANKCAH2N7270	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 11A I(D) \| TO-254AA

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