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JANKCA2N7237 PDF预览

JANKCA2N7237

更新时间: 2024-01-20 15:24:44
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
19页 125K
描述
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 11A I(D) | TO-254AA

JANKCA2N7237 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:DIE
包装说明:UNCASED CHIP, R-XUUC-N3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.40风险等级:5.09
Is Samacsys:N雪崩能效等级(Eas):500 mJ
外壳连接:DRAIN配置:SINGLE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):11 A
最大漏极电流 (ID):11 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-XUUC-N3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:UNCASED CHIP峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):125 W
最大脉冲漏极电流 (IDM):44 A认证状态:Not Qualified
参考标准:MIL-19500/595F子类别:Other Transistors
表面贴装:YES端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

JANKCA2N7237 数据手册

 浏览型号JANKCA2N7237的Datasheet PDF文件第2页浏览型号JANKCA2N7237的Datasheet PDF文件第3页浏览型号JANKCA2N7237的Datasheet PDF文件第4页浏览型号JANKCA2N7237的Datasheet PDF文件第5页浏览型号JANKCA2N7237的Datasheet PDF文件第6页浏览型号JANKCA2N7237的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this  
revision shall be completed by 13 November  
2002.  
INCH-POUND  
MIL-PRF-19500/595D  
13 August 2002  
SUPERSEDING  
MIL-PRF-19500/595C  
26 August 1996  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,  
TRANSISTOR, P-CHANNEL, SILICON,  
TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U  
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
* 1.1 Scope. This specification covers the performance requirements for an P-channel, enhancement-mode,  
MOSFET, power transistor intended for use in high density power switching applications. Four levels of product  
assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product  
assurance for each unencapsulated device type die, with avalanche energy ratings (E  
and E ) and maximum  
AS  
AR  
avalanche current (I ).  
AR  
* 1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 (T0-267AB) for surface mount devices, and figure 3  
for JANHC and JANKC (die) dimensions.  
* 1.3 Maximum ratings (TC = +25°C, unless otherwise specified).  
Min  
Type  
V(BR)DSS PT (1)  
PT  
TA =  
VGS ID1 (2)  
TC =  
I
D2 (2)  
TC =  
IS  
IDM  
(3)  
Top  
and  
TSTG  
Rθ  
max  
JC  
VGS = 0  
ID = -1.0  
mA dc  
V dc  
TC =  
+25°C +25°C  
+25°C +100°C  
W
W
V dc  
A dc  
A dc  
A dc  
A(pk)  
°C  
°C/W  
2N7236, 2N7236U  
2N7237, 2N7237U  
-100  
-200  
125  
125  
4.0  
4.0  
-18  
-11  
-11  
-7  
-18  
-11  
-72  
-44  
-55 to +150  
-55 to +150  
1.0  
1.0  
±20  
±20  
See footnotes next page.  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in  
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,  
P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD  
Form 1426) appearing at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited  

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