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JANKCAH2N7381

更新时间： 2024-02-01 15:58:26
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
18页 92K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-257AA

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中文翻译

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JANKCAH2N7381 技术参数

是否无铅： 含铅生命周期：Transferred
零件包装代码：DIE包装说明：UNCASED CHIP, R-XUUC-N3
针数：3Reach Compliance Code：unknown
风险等级：5.26其他特性：RADIATION HARDENED
外壳连接：DRAIN配置：SINGLE
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XUUC-N3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：UNCASED CHIP
极性/信道类型：N-CHANNEL AND P-CHANNEL认证状态：Not Qualified
参考标准：MIL-19500/657A表面贴装：YES
端子形式：NO LEAD端子位置：UPPER
晶体管元件材料：SILICONBase Number Matches：1

JANKCAH2N7381 数据手册

 浏览型号JANKCAH2N7381的Datasheet PDF文件第2页浏览型号JANKCAH2N7381的Datasheet PDF文件第3页浏览型号JANKCAH2N7381的Datasheet PDF文件第4页浏览型号JANKCAH2N7381的Datasheet PDF文件第5页浏览型号JANKCAH2N7381的Datasheet PDF文件第6页浏览型号JANKCAH2N7381的Datasheet PDF文件第7页 
The documentation and process  
conversion measures necessary to  
comply with this revision shall be  
completed by 22 May 2002.  
INCH-POUND  
MIL-PRF-19500/614B  
22 February 2002  
SUPERSEDING  
MIL-PRF-19500/614A  
3 May 1996  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR,  
N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381  
JANTXV M, D, R, F, G, AND H, JANS M, D, R, F, G, AND H  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the detail requirements for an N-channel, radiation hardened, enhancement  
mode, MOSFET, power transistor intended for use in high density power switching applications. Two levels of  
product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings  
(EAS) and maximum avalanche current (IAS).  
1.2 Physical dimensions. See figure 1 (T0-257AA).  
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.  
Type  
Min V(BR)DSS  
GS = 0 V  
ID = 1.0 mA dc  
PT (1)  
TC =  
+25°C  
PT  
VGS  
ID1 (2)  
ID2 (2)  
TJ and TSTG  
V
TA = +25°C  
(free air)  
TC = +25°C TC = +100°C  
V dc  
W
W
V dc  
A dc  
A dc  
°C  
2N7380  
2N7381  
100  
200  
75  
75  
2
2
14.4  
9.4  
9.1  
6.0  
±20  
±20  
-55 to +150  
-55 to +150  
Max rDS(on) (1)  
IS  
IDM  
(3)  
V
GS = 12 V dc  
ID = ID2  
EAS  
max  
IAS  
Rθ  
max  
JC  
Type  
TJ = +25°C TJ = +150°C  
A dc  
A(pk)  
mJ  
A dc  
Ω
Ω
°C/W  
2N7380  
2N7381  
14.4  
9.4  
57  
37  
150  
150  
14.4  
9.4  
0.18  
0.40  
0.33  
0.84  
1.67  
1.67  
(1) Derate linearly by 0.6 W/°C for TC > +25°C;  
= TJMAX - TC  
PT  
Rθ  
JC  
max-  
T J  
)x(  
TC  
at  
(2)  
=
ID  
(
)
T Jmax  
RΘJC RDS  
on  
(3) IDM = 4 x ID1; ID1 as calculated by footnote (2).  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving  
this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P.O. Box 3990  
Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426)  
appearing at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
1234567...18

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