Datasheet > JANKCA2N7219

JANKCA2N7219

更新时间： 2024-01-21 14:30:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
24页	349K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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JANKCA2N7219 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.38
配置：	Single	最大漏极电流 (Abs) (ID)：	18 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	125 W	子类别：	FET General Purpose Power
表面贴装：	NO	Base Number Matches：	1

JANKCA2N7219 数据手册

INCH-POUND

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 1 June 2013.

MIL-PRF-19500/596K

17 April 2013

SUPERSEDING

MIL-PRF-19500/596J

14 April 2009

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,

TRANSISTOR, N-CHANNEL, SILICON,

TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U,

2N7221U, AND 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement mode,

MOSFET, power transistor intended for use in high density power switching applications. Four levels of product

assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum

ratings (E_ARand E_AS) and maximum avalanche current I_AR. Two levels of product assurance are provided for die

(element evaluation).

1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 for JANHC and JANKC (die) dimensions, and figure 3

for surface mount (TO-267AB).

1.3 Maximum ratings. Unless otherwise specified, T_C= +25°C.

Type

P_T(1)

P_T

V_(BR)DSSmin I_D1(3) (4) I_D2(3) (4)

I_S

I_DM

(5)

T_J

R_θ

T_C=

+25°C

T_A=

+25°C

(2)

V_GS= 0

I_D= 1.0 mA dc

V dc

T_C=

+25°C

A dc

T_C=

+100°C

A dc

and

T_STG

°C

A dc A (pk)

°C/W

2N7218, 2N7218U

2N7219, 2N7219U

2N7221, 2N7221U

2N7222, 2N7222U

125

100

200

400

500

112

1.0

-55 to +150

See notes next page.

Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

Semiconductor@dla.mil. Since contact information can change, you may want to verify the currency of this

address information using the ASSIST Online database at https://assist.dla.mil/.

AMSC N/A

FSC 5961

12 3 4 5 6 7...24

中文翻译

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与JANKCA2N7219相关器件

型号	品牌	获取价格	描述	数据表
JANKCA2N7236	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 18A I(D) \| TO-254AA
JANKCA2N7237	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 11A I(D) \| TO-254AA
JANKCAF2N7383	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide
JANKCAH2N7261	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 8A I(D) \| TO-205AF
JANKCAH2N7262	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 5.5A I(D) \| TO-205AF
JANKCAH2N7268	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 34A I(D) \| TO-254AA
JANKCAH2N7269	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 26A I(D) \| TO-254AA
JANKCAH2N7270	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 11A I(D) \| TO-254AA
JANKCAH2N7380	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 12A I(D) \| TO-257AA
JANKCAH2N7381	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 8A I(D) \| TO-257AA

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